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Authors: Hogg, SM Vantomme, A Wu, MF Pipeleers, B Swart, M

Citation: Sm. Hogg et al., Temperature and angular effects on the channelled implantation of Er into Si < 111 >, NUCL INST B, 175, 2001, pp. 585-589

Authors: Hogg, SM Vantomme, A Wu, MF Langouche, G

Citation: Sm. Hogg et al., Electrical properties of rare earth silicides produced by channeled ion beam synthesis, MICROEL ENG, 50(1-4), 2000, pp. 211-215

Authors: Wu, MF Yao, SD Vantomme, A Hogg, SM Langouche, G Li, J Zhang, GY

Citation: Mf. Wu et al., Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction, J VAC SCI B, 17(4), 1999, pp. 1502-1506

Authors: Hogg, SM Vantomme, A Wu, MF Yao, SD Pattyn, H Langouche, G

Citation: Sm. Hogg et al., Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis, NUCL INST B, 148(1-4), 1999, pp. 621-625

Authors: Wu, MF Vantomme, A Hogg, SM Langouche, G Van der Stricht, W Jacobs, K Moerman, I

Citation: Mf. Wu et al., Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study, APPL PHYS L, 74(3), 1999, pp. 365-367