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Citation: Yd. Jho et al., Real-to-virtual transition in bulk GaAs: the thickness dependence, J KOR PHYS, 37(5), 2000, pp. 728-734

Authors: Yee, DS Yee, KJ Hohng, SC Kim, DS Meier, T Koch, SW

Citation: Ds. Yee et al., Coherent control of absorption and polarization decay in a GaAs quantum well: Time and spectral domain studies, PHYS REV L, 84(15), 2000, pp. 3474-3477

Authors: Hohng, SC Khang, DW Ahn, YH Lee, JY Kihm, SY Kim, DH Kim, WS Woo, JC Kim, DS Citrin, DS Woo, DH Kim, EK Kim, SH Lim, KS

Citation: Sc. Hohng et al., Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures, PHYS REV B, 60(12), 1999, pp. 8883-8889

Authors: Ahn, YH Yahng, JS Sohn, JY Yee, KJ Hohng, SC Woo, JC Kim, DS Meier, T Koch, SW Lim, YS Kim, EK

Citation: Yh. Ahn et al., From exciton resonance to frequency mixing in GaAs multiple quantum wells, PHYS REV L, 82(19), 1999, pp. 3879-3882

Authors: Hohng, SC Kim, DS

Citation: Sc. Hohng et Ds. Kim, Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells, APPL PHYS L, 75(23), 1999, pp. 3620-3622