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Results: 1-15 |
Results: 15
Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy
Authors: Hoke, WE Lemonias, PJ Kennedy, TD Torabi, A Tong, EK Bourque, RJ Jang, JH Cueva, G Dumka, DC Adesida, I Chang, KL Hsieh, KC
Citation: We. Hoke et al., Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1505-1509
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
Authors: Lubyshev, D Liu, WK Stewart, TR Cornfeld, AB Fang, XM Xu, X Specht, P Kisielowski, C Naidenkova, M Goorsky, MS Whelan, CS Hoke, WE Marsh, PF Millunchick, JM Svensson, SP
Citation: D. Lubyshev et al., Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1510-1514
Molecular beam epitaxial growth and characterization of strain-compensatedAl0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates
Authors: Hoke, WE Lemonias, PJ Kennedy, TD Torabi, A Tong, EK Chang, KL Hsieh, KC
Citation: We. Hoke et al., Molecular beam epitaxial growth and characterization of strain-compensatedAl0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1519-1523
Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Adesida, I
Citation: Jh. Jang et al., Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates, IEEE PHOTON, 13(2), 2001, pp. 151-153
The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Fay, P Adesida, I
Citation: Jh. Jang et al., The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes, IEEE PHOTON, 13(10), 2001, pp. 1097-1099
High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates
Authors: Dumka, DC Hoke, WE Lemonias, PJ Cueva, G Adesida, I
Citation: Dc. Dumka et al., High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates, IEEE ELEC D, 22(8), 2001, pp. 364-366
Metamorphic transistor technology for RF applications
Authors: Whelan, CS Marsh, PF Hoke, WE Laredizabal, SM Leoni, R Hwang, KC Kazior, TE
Citation: Cs. Whelan et al., Metamorphic transistor technology for RF applications, MICROWAVE J, 44(4), 2001, pp. 110
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Fay, P Adesida, I
Citation: Jh. Jang et al., Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates, ELECTR LETT, 37(11), 2001, pp. 707-708
Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4
Authors: Hoke, WE Lyman, PS Whelan, CS Mosca, JJ Torabi, A Chang, KL Hsieh, KC
Citation: We. Hoke et al., Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4, J VAC SCI B, 18(3), 2000, pp. 1638-1641
Low noise In-0.32(AlGa)(0.68)As/In0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
Authors: Whelan, CS Hoke, WE McTaggart, RA Lardizabal, SM Lyman, PS Marsh, PF Kazior, TE
Citation: Cs. Whelan et al., Low noise In-0.32(AlGa)(0.68)As/In0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density, IEEE ELEC D, 21(1), 2000, pp. 5-8
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates
Authors: Whelan, CS Marsh, PF Hoke, WE McTaggart, RA Lyman, PS Lemonias, PJ Lardizabal, SM Leoni, RE Lichwala, SJ Kazior, TE
Citation: Cs. Whelan et al., Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates, IEEE J SOLI, 35(9), 2000, pp. 1307-1311
Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films
Authors: Hoke, WE Lemonias, PJ
Citation: We. Hoke et Pj. Lemonias, Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films, J VAC SCI B, 17(5), 1999, pp. 2009-2014
Molecular beam epitaxial growth and device performance of metamorphic highelectron mobility transistor structures fabricated on GaAs substrates
Authors: Hoke, WE Lemonias, PJ Mosca, JJ Lyman, PS Torabi, A Marsh, PF McTaggart, RA Lardizabal, SM Hetzler, K
Citation: We. Hoke et al., Molecular beam epitaxial growth and device performance of metamorphic highelectron mobility transistor structures fabricated on GaAs substrates, J VAC SCI B, 17(3), 1999, pp. 1131-1135
Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with f(T) over 200 GHz
Authors: Dumka, DC Hoke, WE Lemonias, PJ Cueva, G Adesida, I
Citation: Dc. Dumka et al., Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with f(T) over 200 GHz, ELECTR LETT, 35(21), 1999, pp. 1854-1856
Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy
Authors: Hoke, WE Lemonias, PJ Torabi, A
Citation: We. Hoke et al., Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy, J VAC SCI B, 16(6), 1998, pp. 3041-3047
Risultati: 1-15 |