Authors: Kovalgin, A Holleman, J

Citation: A. Kovalgin et J. Holleman, A study of morphology and texture of LPCVD germanium-silicon films, J PHYS IV, 11(PR3), 2001, pp. 47-54

Authors: Isai, G Kovalgin, A Holleman, J Woerlee, P Wallinga, H

Citation: G. Isai et al., Room temperature SiO2 films deposited by multipolar ECR PECVD, J PHYS IV, 11(PR3), 2001, pp. 747-753

Authors: Bystrova, S Holleman, J Woerlee, PH

Citation: S. Bystrova et al., Growth and properties of LPCVD W-Si-N barrier layers, MICROEL ENG, 55(1-4), 2001, pp. 189-195

Authors: Akil, N Houtsma, VE LeMinh, P Holleman, J Zieren, V de Mooij, D Woerlee, PH van den Berg, A Wallinga, H

Citation: N. Akil et al., Modeling of light-emission spectra measured on silicon nanometer-scale diode antifuses, J APPL PHYS, 88(4), 2000, pp. 1916-1922

Authors: Houtsma, VE Holleman, J Salm, C Widdershoven, FP Woerlee, PH

Citation: Ve. Houtsma et al., Stress-induced leakage current in p(+) poly MOS capacitors with poly-Si and Poly-Si0.7Ge0.3 gate material, IEEE ELEC D, 20(7), 1999, pp. 314-316

Authors: Houtsma, VE Holleman, J Salm, C Woerlee, PH

Citation: Ve. Houtsma et al., SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material, MICROEL ENG, 48(1-4), 1999, pp. 415-418