Authors: Akil, N Houtsma, VE LeMinh, P Holleman, J Zieren, V de Mooij, D Woerlee, PH van den Berg, A Wallinga, H

Citation: N. Akil et al., Modeling of light-emission spectra measured on silicon nanometer-scale diode antifuses, J APPL PHYS, 88(4), 2000, pp. 1916-1922

Authors: Houtsma, VE Holleman, J Salm, C Widdershoven, FP Woerlee, PH

Citation: Ve. Houtsma et al., Stress-induced leakage current in p(+) poly MOS capacitors with poly-Si and Poly-Si0.7Ge0.3 gate material, IEEE ELEC D, 20(7), 1999, pp. 314-316

Authors: Houtsma, VE Holleman, J Salm, C Woerlee, PH

Citation: Ve. Houtsma et al., SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material, MICROEL ENG, 48(1-4), 1999, pp. 415-418