Authors: Tang, Z Hsia, H Kuo, HC Caruth, D Stillman, GE Feng, M

Citation: Z. Tang et al., 188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs, ELECTR LETT, 36(19), 2000, pp. 1657-1659

Authors: Kuo, HC Moser, BG Hsia, H Tang, Z Feng, M Stillman, GE Lin, CH Chen, H

Citation: Hc. Kuo et al., Growth of high performance InGaAs InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1139-1143

Authors: Hsia, H Tang, Z Caruth, D Becher, D Feng, M

Citation: H. Hsia et al., Direct ion-implanted 0.12-mu m GaAs MESFET with ft of 121 GHz and f(max) of 160 GHz, IEEE ELEC D, 20(5), 1999, pp. 245-247

Authors: Dupuis, RD Eiting, CJ Grudowski, PA Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M

Citation: Rd. Dupuis et al., Activation of silicon ion-implanted gallium nitride by furnace annealing, J ELEC MAT, 28(3), 1999, pp. 319-324

Authors: Eiting, CJ Grudowski, PA Dupuis, RD Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M

Citation: Cj. Eiting et al., Activation studies of low-dose Si implants in gallium nitride, APPL PHYS L, 73(26), 1998, pp. 3875-3877