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Results:
1-7
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Results: 7
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
Hullavarad, SS
Friedland, E
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Authors:
Naddaf, M
Hullavarad, SS
Bhoraskar, VN
Sainkar, SR
Mandale, AB
Bhoraskar, SV
Citation: M. Naddaf et al., Nitridation of steel using a microwave ECR plasma, VACUUM, 64(2), 2001, pp. 163-168
Authors:
Hullavarad, SS
Nikesh, VV
Sainkar, SR
Ganesan, V
Mahamuni, S
Bhoraskar, SV
Citation: Ss. Hullavarad et al., Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs, THIN SOL FI, 381(1), 2001, pp. 69-72
Authors:
Railkar, TA
Malshe, AP
Brown, WD
Hullavarad, SS
Bhoraskar, SV
Citation: Ta. Railkar et al., Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects, J APPL PHYS, 89(9), 2001, pp. 4766-4771
Authors:
Hullavarad, SS
Bhoraskar, SV
Kanjilal, D
Citation: Ss. Hullavarad et al., Oxygen related defects in high energy ion irradiated GaAs, NUCL INST B, 156(1-4), 1999, pp. 95-99
Authors:
Bhave, TM
Hullavarad, SS
Bhoraskar, SV
Hegde, SG
Kanjilal, D
Citation: Tm. Bhave et al., FTIR studies of swift silicon and oxygen ion irradiated porous silicon, NUCL INST B, 156(1-4), 1999, pp. 121-124
Authors:
Hullavarad, SS
Bhoraskar, SV
Sainkar, SR
Badrinarayanan, S
Mandale, AB
Ganesan, V
Citation: Ss. Hullavarad et al., Deep levels in GaN grown by nitridation of GaAs (110) surface in a electron cyclotron-resonance ammonia plasma, VACUUM, 55(2), 1999, pp. 121-126
Risultati:
1-7
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