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Results:
1-8
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Results: 8
Authors:
Ruterana, P
Karakostas, T
Humphreys, C
Citation: P. Ruterana et al., Interfaces and defects at atomic level - Preface, PHYS ST S-B, 227(1), 2001, pp. V-VI
Authors:
Humphreys, C
Citation: C. Humphreys, Noel Coward and Peter Humphreys: An unpublished letter to an aspiring playwright, THEAT NOTE, 55(1), 2001, pp. 48-48
Authors:
Cho, HK
Lee, JY
Kim, CS
Yang, GM
Sharma, N
Humphreys, C
Citation: Hk. Cho et al., Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition, J CRYST GR, 231(4), 2001, pp. 466-473
Authors:
Sharma, N
Tricker, D
Thomas, P
Bougrioua, Z
Jacobs, K
Cheyns, J
Moerman, I
Thrush, T
Considine, L
Boyd, A
Humphreys, C
Citation: N. Sharma et al., Chemical mapping of InGaN MQWs, J CRYST GR, 230(3-4), 2001, pp. 438-441
Authors:
Bougrioua, Z
Moerman, I
Sharma, N
Wallis, RH
Cheyns, J
Jacobs, K
Thrush, EJ
Considine, L
Beanland, R
Farvacque, JL
Humphreys, C
Citation: Z. Bougrioua et al., Material optimisation for AlGaN/GaN HFET applications, J CRYST GR, 230(3-4), 2001, pp. 573-578
Authors:
Thomas, MDR
Ahmed, H
Sanderson, KM
Shephard, DS
Johnson, BFG
Ozkaya, D
Sharma, N
Humphreys, C
Citation: Mdr. Thomas et al., Effects of electron-beam exposure on a ruthenium nanocluster polymer, J APPL PHYS, 90(2), 2001, pp. 947-952
Authors:
Sharma, N
Thomas, P
Tricker, D
Humphreys, C
Citation: N. Sharma et al., Chemical mapping and formation of V-defects in InGaN multiple quantum wells, APPL PHYS L, 77(9), 2000, pp. 1274-1276
Authors:
Ashworth, A
Lloyd, S
Brown, J
Gydesen, S
Sorensen, SA
Brun, A
Englund, E
Humphreys, C
Housman, D
Badura, M
Stanton, V
Taylor, K
Cameron, J
Munroe, D
Johansson, J
Rossor, M
Fisher, EMC
Collinge, J
Citation: A. Ashworth et al., Molecular genetic characterisation of frontotemporal dementia on chromosome 3, DEMENT G C, 10, 1999, pp. 93-101
Risultati:
1-8
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