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Results: 1-25/31
Authors:
Bright, AN
Humphreys, CJ
Citation: An. Bright et Cj. Humphreys, Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy, PHIL MAG B, 81(11), 2001, pp. 1725-1744
Authors:
Kenyon, AJ
Chryssou, CE
Pitt, CW
Shimizu-Iwayama, T
Hole, DE
Sharma, N
Humphreys, CJ
Citation: Aj. Kenyon et al., Broad-band and flashlamp pumping of 1.53 mu m emission from erbium-doped silicon nanocrystals, MAT SCI E B, 81(1-3), 2001, pp. 19-22
Authors:
Bright, AN
Tricker, DM
Humphreys, CJ
Davies, R
Citation: An. Bright et al., A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN, J ELEC MAT, 30(3), 2001, pp. L13-L16
Authors:
Pankhurst, DA
Botton, GA
Humphreys, CJ
Citation: Da. Pankhurst et al., Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary - art. no. 205117, PHYS REV B, 6320(20), 2001, pp. 5117
Authors:
Tatsuoka, H
Koga, T
Matsuda, K
Nose, Y
Souno, Y
Kuwabara, H
Brown, PD
Humphreys, CJ
Citation: H. Tatsuoka et al., Microstructure of semiconducting MnSi1.7 and beta-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy, THIN SOL FI, 381(2), 2001, pp. 231-235
Authors:
Bright, AN
Thomas, PJ
Weyland, M
Tricker, DM
Humphreys, CJ
Davies, R
Citation: An. Bright et al., Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy, J APPL PHYS, 89(6), 2001, pp. 3143-3150
Authors:
Mavroidis, C
Harris, JJ
Kappers, MJ
Sharma, N
Humphreys, CJ
Thrush, EJ
Citation: C. Mavroidis et al., Observation of thermally activated conduction at a GaN-sapphire interface, APPL PHYS L, 79(8), 2001, pp. 1121-1123
Authors:
Cho, HK
Lee, JY
Sharma, N
Humphreys, CJ
Yang, GM
Kim, CS
Song, JH
Yu, PW
Citation: Hk. Cho et al., Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells, APPL PHYS L, 79(16), 2001, pp. 2594-2596
Authors:
Saifullah, MSM
Kurihara, K
Humphreys, CJ
Citation: Msm. Saifullah et al., Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists, J VAC SCI B, 18(6), 2000, pp. 2737-2744
Authors:
Fairbank, GB
Humphreys, CJ
Kelly, A
Jones, CN
Citation: Gb. Fairbank et al., Ultra-high temperature intermetallics for the third millennium, INTERMETALL, 8(9-11), 2000, pp. 1091-1100
Authors:
Botton, GA
Nishino, Y
Humphreys, CJ
Citation: Ga. Botton et al., Microstructural evolution and stability of (Fe1-xVx)(3)Al alloys in relation to the electronic structure., INTERMETALL, 8(9-11), 2000, pp. 1209-1214
Authors:
Pekarskaya, E
Botton, GA
Jones, CN
Humphreys, CJ
Citation: E. Pekarskaya et al., The effect of annealing on the microstructure and tensile properties of a beta/gamma ' Ni-Al-Fe alloy, INTERMETALL, 8(8), 2000, pp. 903-913
Authors:
Humphreys, CJ
Citation: Cj. Humphreys, The numbers in the Exodus from Egypt: A further appraisal (An alternative interpretation of ancient Hebrew census documentation), VETUS TEST, 50(3), 2000, pp. 323-328
Authors:
Cockayne, DJH
Gjonnes, J
Humphreys, CJ
Lehmpfuhl, G
Murphy, J
Shmueli, U
Spence, JCH
Tanaka, M
Witte, NS
Citation: Djh. Cockayne et al., Peter Goodman, J APPL CRYS, 33, 2000, pp. 1302-1302
Authors:
Natusch, MKH
Humphreys, CJ
Menon, N
Krivanek, OL
Citation: Mkh. Natusch et al., Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy, MICRON, 30(2), 1999, pp. 173-183
Authors:
Botton, GA
Humphreys, CJ
Citation: Ga. Botton et Cj. Humphreys, Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory, INTERMETALL, 7(7), 1999, pp. 829-833
Authors:
Kaiser, U
Khodos, I
Brown, PD
Chuvilin, A
Albrecht, M
Humphreys, CJ
Fissel, A
Richter, W
Citation: U. Kaiser et al., A transmission electron microscopy investigation of SiC films grown on SiCsubstrates by solid-source molecular beam epitaxy, J MATER RES, 14(8), 1999, pp. 3226-3236
Authors:
Kaiser, U
Brown, PD
Khodos, I
Humphreys, CJ
Schenk, HPD
Richter, W
Citation: U. Kaiser et al., The effect of growth condition on the structure of 2H-AIN films deposited on Si(111) by plasma-assisted molecular beam epitaxy, J MATER RES, 14(5), 1999, pp. 2036-2042
Authors:
Tricker, DM
Jacobs, K
Humphreys, CJ
Citation: Dm. Tricker et al., Characterisation of epitaxial laterally overgrown gallium nitride using transmission electron microscopy, PHYS ST S-B, 216(1), 1999, pp. 633-637
Authors:
Humphreys, CJ
Citation: Cj. Humphreys, A two-phase charge-density real-space-pairing model of high-T-c superconductivity, ACT CRYST A, 55(1), 1999, pp. 228-233
Authors:
Yonenaga, I
Lim, SH
Shindo, D
Brown, PD
Humphreys, CJ
Citation: I. Yonenaga et al., Structure and climb of faulted dipoles in GaAs, PHYS ST S-A, 171(1), 1999, pp. 53-57
Authors:
Humphreys, CJ
Citation: Cj. Humphreys, Electrons seen in orbit, NATURE, 401(6748), 1999, pp. 21-22
Authors:
Liu, CP
Boothroyd, CB
Humphreys, CJ
Citation: Cp. Liu et al., Energy-filtered transmission electron microscopy of multilayers in semiconductors, J MICROSC O, 194, 1999, pp. 58-70
Authors:
Liu, CP
Preston, AR
Boothroyd, CB
Humphreys, CJ
Citation: Cp. Liu et al., Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images, J MICROSC O, 194, 1999, pp. 171-182
Authors:
Weyher, JL
Brown, PD
Zauner, ARA
Muller, S
Boothroyd, CB
Foord, DT
Hageman, PR
Humphreys, CJ
Larsen, PK
Grzegory, I
Porowski, S
Citation: Jl. Weyher et al., Morphological and structural characteristics of homoepitaxial GaN grown bymetalorganic chemical vapour deposition (MOCVD), J CRYST GR, 204(4), 1999, pp. 419-428