ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Ti-silicide formation during isochronal annealing followed by in situ ellipsometry

Authors: Stark, T Gutowski, L Herden, M Grunleitner, H Kohler, S Hundhausen, M Ley, L

Citation: T. Stark et al., Ti-silicide formation during isochronal annealing followed by in situ ellipsometry, MICROEL ENG, 55(1-4), 2001, pp. 101-107

Analysis of the moving photocarrier grating technique for semiconductors of high defect density - art. no. 104201

Authors: Schmidt, JA Hundhausen, M Ley, L

Citation: Ja. Schmidt et al., Analysis of the moving photocarrier grating technique for semiconductors of high defect density - art. no. 104201, PHYS REV B, 6410(10), 2001, pp. 4201

Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC

Authors: Rohmfeld, S Hundhausen, M Ley, L Schulze, N Pensl, G

Citation: S. Rohmfeld et al., Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC, PHYS REV L, 86(5), 2001, pp. 826-829

Study of space-charge-limited currents in high-voltage TFTs based on a-Si : H

Authors: Popescu, B Hundhausen, M Ley, L

Citation: B. Popescu et al., Study of space-charge-limited currents in high-voltage TFTs based on a-Si : H, J NON-CRYST, 283(1-3), 2001, pp. 155-161

Selective resonance effect of the folded longitudinal phonon modes in the Raman spectra of SiC

Authors: Tomita, T Saito, S Baba, M Hundhausen, M Suemoto, T Nakashima, S

Citation: T. Tomita et al., Selective resonance effect of the folded longitudinal phonon modes in the Raman spectra of SiC, PHYS REV B, 62(19), 2000, pp. 12896-12901

Transport properties of a-Si1-xCx : H films investigated by the moving photocarrier grating technique

Authors: Schmidt, JA Hundhausen, M Ley, L

Citation: Ja. Schmidt et al., Transport properties of a-Si1-xCx : H films investigated by the moving photocarrier grating technique, PHYS REV B, 62(19), 2000, pp. 13010-13015

Deriving the kinetic parameters for Pt-silicide formation from temperatureramped in situ ellipsometric measurements

Authors: Stark, T Grunleitner, H Hundhausen, M Ley, L

Citation: T. Stark et al., Deriving the kinetic parameters for Pt-silicide formation from temperatureramped in situ ellipsometric measurements, THIN SOL FI, 358(1-2), 2000, pp. 73-79

Transport properties of amorphous hydrogenated silicon-carbon alloys

Authors: Schmidt, JA Hundhausen, M Ley, L

Citation: Ja. Schmidt et al., Transport properties of amorphous hydrogenated silicon-carbon alloys, J NON-CRYST, 266, 2000, pp. 694-698

Near-thermal equilibrium growth of SiC by physical vapor transport

Authors: Schulze, N Barrett, DL Pensl, G Rohmfeld, S Hundhausen, M

Citation: N. Schulze et al., Near-thermal equilibrium growth of SiC by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 44-47

Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry

Authors: Zhou, SM Hundhausen, M Stark, T Chen, LY Ley, L

Citation: Sm. Zhou et al., Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry, J VAC SCI A, 17(1), 1999, pp. 144-149

Influence of stacking disorder on the Raman spectrum of 3C-SiC

Authors: Rohmfeld, S Hundhausen, M Ley, L

Citation: S. Rohmfeld et al., Influence of stacking disorder on the Raman spectrum of 3C-SiC, PHYS ST S-B, 215(1), 1999, pp. 115-119

Risultati: 1-11 |