Citation: S. Musser et al., Application of SIMS in re-technology studies: Characterization of trace-element distributions and quantitative of carbon-determination, MIKROCH ACT, 133(1-4), 2000, pp. 253-259
Citation: Tc. Stubbings et al., Channelplate illumination correction for secondary ion mass spectroscopy images by solving apparatus elasticity equations, MICROS MICR, 5(6), 1999, pp. 407-412
Authors:
Andreev, AY
Andreev, BA
Drozdov, MN
Krasil'nik, ZF
Stepikhova, MV
Shmagin, VB
Kuznetsov, VP
Rubtsova, RA
Uskova, EA
Karpov, YA
Ellmer, H
Palmetshofer, L
Piplits, K
Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
Authors:
Kolber, T
Piplits, K
Haubner, R
Hutter, H
Citation: T. Kolber et al., Quantitative investigation of boron incorporation in polycrystalline CVD diamond films by SIMS, FRESEN J AN, 365(8), 1999, pp. 636-641
Citation: M. Wolkenstein et al., Robust automated three-dimensional segmentation of secondary ion mass spectrometry image sets, FRESEN J AN, 365(1-3), 1999, pp. 63-69
Authors:
Gritsch, M
Brunner, C
Piplits, K
Hutter, H
Wilhartitz, P
Schintlmeister, A
Martinz, HP
Citation: M. Gritsch et al., Application of scanning SIMS techniques for the evaluation of the oxidation behavior of high-purity molybdenum, FRESEN J AN, 365(1-3), 1999, pp. 188-194
Authors:
Andreev, AY
Andreev, BA
Drozdov, MN
Ellmer, H
Kuznetsov, VP
Kalugin, NG
Krasilnic, ZF
Karpov, YA
Palmetshofer, L
Piplits, K
Rubtsova, RA
Stepikhova, MV
Uskova, EA
Shmagin, VB
Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Citation: T. Stubbings et H. Hutter, Classification of analytical images with radial basis function networks and forward selection, CHEM INTELL, 49(2), 1999, pp. 163-172
Authors:
Appuhn, RD
Ardnt, C
Barrelet, E
Barschke, R
Bassler, U
Blouzon, F
Boudry, V
Brasse, F
Bruel, P
Bruncko, D
Buchholz, R
Cahan, B
Chechelnitski, S
Claxton, B
Cozzika, G
Cvach, J
Dagoret-Campagne, S
Dau, WD
Deckers, H
Deckers, T
Descamps, F
Dirkmann, M
Dowdell, J
Drancourt, C
Durant, O
Efremenko, V
Eisenhandler, E
Eliseev, AN
Falley, G
Ferencei, J
Fleischer, M
Fominykh, B
Gadow, K
Goerlach, U
Gorbov, LA
Gorelov, I
Grewe, M
Hajduk, L
Herynek, I
Hladky, J
Hutte, M
Hutter, H
Janata, M
Janczar, W
Janoth, J
Jonsson, L
Kacl, I
Kolanoski, H
Korbel, V
Krivan, F
Lacour, D
Laforge, B
Lamarche, F
Landon, MPJ
Laporte, JF
Lebollo, H
Le Coguie, A
Lehner, F
Maracek, R
Matricon, P
Meier, K
Meyer, A
Migliori, A
Moreau, F
Muller, G
Murin, P
Nagovizin, V
Nicholls, TC
Ozerov, D
Passerieux, JP
Perez, E
Pharabod, JP
Poschl, R
Renard, C
Rostovtsev, A
Royon, C
Rybicki, K
Schlief, S
Schmitt, K
Schuhmacher, A
Semenov, A
Shekelyan, V
Sirois, Y
Smirnov, PA
Solochenko, V
Spalek, J
Spielmann, S
Steiner, H
Stellberger, A
Stiewe, J
Tasevsky, M
Tchernyshov, V
Thiele, K
Tzamariudaki, E
Valkar, S
Vallee, C
Vallereau, A
VanDenPlas, D
Villet, G
Wacker, K
Walther, A
Weber, M
Wegener, D
Wenk, T
Zacek, J
Zhokin, A
Zini, P
Zuber, K
Citation: Rd. Appuhn et al., The electronics of the H1 lead/scintillating-fibre calorimeters, NUCL INST A, 426(2-3), 1999, pp. 518-537
Authors:
Andreev, BA
Andreev, AY
Ellmer, H
Hutter, H
Krasil'nik, ZF
Kuznetsov, VP
Lanzerstorfer, S
Palmetshofer, L
Piplits, K
Rubtsova, RA
Sokolov, NS
Shmagin, VB
Stepikhova, MV
Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537