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Results: 1-9 |
Results: 9
ROUGHNESS OF THERMAL OXIDE LAYERS GROWN ON ION-IMPLANTED SILICON-WAFERS
Authors: IACONA F RAINERI V LAVIA F RIMINI E
Citation: F. Iacona et al., ROUGHNESS OF THERMAL OXIDE LAYERS GROWN ON ION-IMPLANTED SILICON-WAFERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 619-627
ARSENIC REDISTRIBUTION AT THE SIO2 SI INTERFACE DURING OXIDATION OF IMPLANTED SILICON/
Authors: IACONA F RAINERI V LAVIA F TERRASI A RIMINI E
Citation: F. Iacona et al., ARSENIC REDISTRIBUTION AT THE SIO2 SI INTERFACE DURING OXIDATION OF IMPLANTED SILICON/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10990-10999
PRECIPITATION OF AS IN THERMALLY OXIDIZED ION-IMPLANTED SI CRYSTALS
Authors: TERRASI A RIMINI E RAINERI V IACONA F LAVIA F COLONNA S MOBILIO S
Citation: A. Terrasi et al., PRECIPITATION OF AS IN THERMALLY OXIDIZED ION-IMPLANTED SI CRYSTALS, Applied physics letters, 73(18), 1998, pp. 2633-2635
CHARACTERIZATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY OF THE CHEMICAL-STRUCTURE OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS
Authors: IACONA F LOMBARDO S CAMPISANO SU
Citation: F. Iacona et al., CHARACTERIZATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY OF THE CHEMICAL-STRUCTURE OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2693-2700
GE ION-IMPLANTATION IN SI FOR THE FABRICATION OF SI GEXSI1-X HETEROJUNCTION TRANSISTORS/
Authors: LOMBARDO S RAINERI V LAVIA F IACONA F CAMPISANO SU PINTO A WARD P
Citation: S. Lombardo et al., GE ION-IMPLANTATION IN SI FOR THE FABRICATION OF SI GEXSI1-X HETEROJUNCTION TRANSISTORS/, Materials chemistry and physics, 46(2-3), 1996, pp. 156-160
CHEMICAL SELECTIVITY AND ENERGY-TRANSFER MECHANISMS IN THE RADIATION-INDUCED MODIFICATION OF POLYETHERSULFONE
Authors: MARLETTA G IACONA F
Citation: G. Marletta et F. Iacona, CHEMICAL SELECTIVITY AND ENERGY-TRANSFER MECHANISMS IN THE RADIATION-INDUCED MODIFICATION OF POLYETHERSULFONE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 246-252
ATOMIC-FORCE MICROSCOPY ON SIO2 LAYERS GROWN ON GE IMPLANTED SILICON
Authors: RAINERI V LOMBARDO S IACONA F LAVIA F
Citation: V. Raineri et al., ATOMIC-FORCE MICROSCOPY ON SIO2 LAYERS GROWN ON GE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 482-485
ADXPS STUDY OF THE CHEMICAL-STRUCTURE OF POLYAMIC ACID NI AND POLYIMIDE/NI INTERFACES/
Authors: BASCHENKO OA IACONA F MARLETTA G NEFEDOV VI
Citation: Oa. Baschenko et al., ADXPS STUDY OF THE CHEMICAL-STRUCTURE OF POLYAMIC ACID NI AND POLYIMIDE/NI INTERFACES/, Applied surface science, 74(1), 1994, pp. 27-36
HEAT-INDUCED VERSUS PARTICLE-BEAM-INDUCED CHEMISTRY IN POLYIMIDE
Authors: MARLETTA G IACONA F
Citation: G. Marletta et F. Iacona, HEAT-INDUCED VERSUS PARTICLE-BEAM-INDUCED CHEMISTRY IN POLYIMIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1045-1049
Risultati: 1-9 |