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Results: 1-10 |
Results: 10
PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS
Authors: RIETMAN EA IBBOTSON DE LEE JTC
Citation: Ea. Rietman et al., PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 131-136
POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM
Authors: CHANG CP KLEMENS FP MAYNARD HL LEE TC KORNBLIT A IBBOTSON DE
Citation: Cp. Chang et al., POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 646-651
PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY
Authors: LEE JTC BLAYO N TEPERMEISTER I KLEMENS FP MANSFIELD WM IBBOTSON DE
Citation: Jtc. Lee et al., PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3283-3290
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE
Authors: LEE JTC LAYADI N GUINN KV MAYNARD HL KLEMENS FP IBBOTSON DE TEPERMEISTER I EGAN PO RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK
Authors: MAYNARD HL RIETMAN EA LEE JTC IBBOTSON DE
Citation: Hl. Maynard et al., PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK, Journal of the Electrochemical Society, 143(6), 1996, pp. 2029-2035
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: TEPERMEISTER I BLAYO N KLEMENS FP IBBOTSON DE GOTTSCHO RA LEE JTC SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: TEPERMEISTER I IBBOTSON DE LEE JTC SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2322-2332
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: GIBSON GW SAWIN HH TEPERMEISTER I IBBOTSON DE LEE JTC
Citation: Gw. Gibson et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2333-2341
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: BLAYO N TEPERMEISTER I BENTON JL HIGASHI GS BOONE T ONUOHA A KLEMENS FP IBBOTSON DE SAWIN HH
Citation: N. Blayo et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1340-1350
KINETICS OF SIC CVD - SURFACE DECOMPOSITION OF SILACYCLOBUTANE AND METHYLSILANE
Authors: JOHNSON AD PERRIN J MUCHA JA IBBOTSON DE
Citation: Ad. Johnson et al., KINETICS OF SIC CVD - SURFACE DECOMPOSITION OF SILACYCLOBUTANE AND METHYLSILANE, Journal of physical chemistry, 97(49), 1993, pp. 12937-12948
Risultati: 1-10 |