Authors: KIM TK IHN TH LEE BI JOO SK

Citation: Tk. Kim et al., HIGH-PERFORMANCE LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY NEW METAL-INDUCED LATERAL CRYSTALLIZATION PROCESS, JPN J A P 1, 37(8), 1998, pp. 4244-4247

Authors: IHN TH LEE BI JOO SK JEON YC

Citation: Th. Ihn et al., ELECTRICAL STRESS EFFECT ON POLY-SI THIN-FILM TRANSISTORS FABRICATED BY METAL-INDUCED LATERAL CRYSTALLIZATION, JPN J A P 1, 36(8), 1997, pp. 5029-5032

Authors: LEE SW IHN TH JOO SK

Citation: Sw. Lee et al., FABRICATION OF HIGH-MOBILITY P-CHANNEL POLY-SI THIN-FILM TRANSISTORS BY SELF-ALIGNED METAL-INDUCED LATERAL CRYSTALLIZATION, IEEE electron device letters, 17(8), 1996, pp. 407-409

Authors: LEE SW IHN TH JOO SK

Citation: Sw. Lee et al., LOW-TEMPERATURE DOPANT ACTIVATION AND ITS APPLICATION TO POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 69(3), 1996, pp. 380-382

Authors: JOO SK LEE SW IHN TH

Citation: Sk. Joo et al., EFFECT OF COBALT ADDITION ON THE LIQUID-PHASE SINTERING OF W-CU PREPARED BY THE FLUIDIZED-BED REDUCTION METHOD, Metallurgical and materials transactions. A, Physical metallurgy andmaterials science, 25(8), 1994, pp. 1575-1578

Authors: IHN TH LEE SW JOO SK

Citation: Th. Ihn et al., EFFECT OF TRANSITION-METAL ADDITION ON LIQUID-PHASE SINTERING OF W-CU, Powder Metallurgy, 37(4), 1994, pp. 283-288