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Results: 1-9 |
Results: 9
SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE SILICON INTERLAYER THICKNESS OF AU SI/N-GAAS CONTACTS - CHEMISTRY OF INTERFACE FORMATION STUDY/
Authors: IVANCO J ALMEIDA J COLUZZA C ZWICK F MARGARITONDO G
Citation: J. Ivanco et al., SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE SILICON INTERLAYER THICKNESS OF AU SI/N-GAAS CONTACTS - CHEMISTRY OF INTERFACE FORMATION STUDY/, Vacuum, 50(3-4), 1998, pp. 407-411
ATTEMPTS TO CORRELATE HYDROGEN PLASMA-INDUCED AND SI3N4 GAAS INTERFACE-RELATED SURFACE-STATES - A CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY/
Authors: THURZO I IVANCO J
Citation: I. Thurzo et J. Ivanco, ATTEMPTS TO CORRELATE HYDROGEN PLASMA-INDUCED AND SI3N4 GAAS INTERFACE-RELATED SURFACE-STATES - A CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY/, Applied surface science, 108(1), 1997, pp. 187-196
AU GAAS(100) INTERFACE SCHOTTKY-BARRIER MODIFICATION BY A SILICON-NITRIDE INTRALAYER/
Authors: ALMEIDA J COLUZZA C DELLORTO T MARGARITONDO G TERRASI A IVANCO J
Citation: J. Almeida et al., AU GAAS(100) INTERFACE SCHOTTKY-BARRIER MODIFICATION BY A SILICON-NITRIDE INTRALAYER/, Journal of applied physics, 81(1), 1997, pp. 292-296
A STUDY ON THERMAL EMISSION OF CHARGES AT SI3N4-GAAS INTERFACES AFTERANNEALING IN N-2 AND N-2-2 MIXTURES(H)
Authors: IVANCO J THURZO I HULENYI L
Citation: J. Ivanco et al., A STUDY ON THERMAL EMISSION OF CHARGES AT SI3N4-GAAS INTERFACES AFTERANNEALING IN N-2 AND N-2-2 MIXTURES(H), Materials science & engineering. B, Solid-state materials for advanced technology, 40(2-3), 1996, pp. 159-163
SEQUENCES REALIZABLE BY MAXIMAL KAPPA-DEGENERATE GRAPHS
Authors: BOROWIECKI M IVANCO J MIHOK P SEMANISIN G
Citation: M. Borowiecki et al., SEQUENCES REALIZABLE BY MAXIMAL KAPPA-DEGENERATE GRAPHS, Journal of graph theory, 19(1), 1995, pp. 117-124
INFLUENCE OF PLASMA ON SILICON SURFACE DURING LOW-ENERGY PLASMA DEPOSITION PROCESS - THE COMPARATIVE-STUDY ON SI3N4 SI STRUCTURES/
Authors: IVANCO J THURZO I PINCIK E
Citation: J. Ivanco et al., INFLUENCE OF PLASMA ON SILICON SURFACE DURING LOW-ENERGY PLASMA DEPOSITION PROCESS - THE COMPARATIVE-STUDY ON SI3N4 SI STRUCTURES/, Applied physics letters, 65(20), 1994, pp. 2594-2596
ON THE ACCUMULATION CAPACITANCE OF SI3N-4 SI/GAAS STRUCTURES FABRICATED IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA/
Authors: IVANCO J BALVINSKY OE THURZO I BARTOS J PINCIK E
Citation: J. Ivanco et al., ON THE ACCUMULATION CAPACITANCE OF SI3N-4 SI/GAAS STRUCTURES FABRICATED IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Applied surface science, 72(1), 1993, pp. 31-37
INCREASED THERMAL-STABILITY OF AU GAAS METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES WITH SILICON-NITRIDE INTERFACIAL LAYER DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION/
Authors: KOLNIK J IVANCO J OZVOLD M WYCZISK F OLIVIER J
Citation: J. Kolnik et al., INCREASED THERMAL-STABILITY OF AU GAAS METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES WITH SILICON-NITRIDE INTERFACIAL LAYER DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION/, Journal of applied physics, 73(10), 1993, pp. 5075-5080
AN INTERPRETATION OF DLTS SPECTRA OF AL SI3N4/ULTRATHIN SI/GAAS STRUCTURES - EFFECT OF QUANTUM-WELL OR INTERFACE STATES/
Authors: BARTOS J PINCIK E THURZO I BALVINSKIJ OE IVANCO J
Citation: J. Bartos et al., AN INTERPRETATION OF DLTS SPECTRA OF AL SI3N4/ULTRATHIN SI/GAAS STRUCTURES - EFFECT OF QUANTUM-WELL OR INTERFACE STATES/, Czechoslovak journal of Physics, 43(9-10), 1993, pp. 875-879
Risultati: 1-9 |