Authors: TOMM Y IVANEKO L IRMSCHER K BREHME S HENRION W SIEBER I LANGE H

Citation: Y. Tomm et al., EFFECTS OF DOPING ON THE ELECTRONIC-PROPERTIES OF SEMICONDUCTING IRONDISILICIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 215-218