Authors: IZIDINOV SO NAZAROV VN SHCHEGLOV OE

Citation: So. Izidinov et al., METALLIZATION OF A POROUS SILICON VOLUME BY CONTROLLING ELECTRODEPOSITION CONDITIONS, Russian journal of applied chemistry, 68(4), 1995, pp. 519-523

Authors: IZIDINOV SO NAZAROV VN

Citation: So. Izidinov et Vn. Nazarov, DROPPING-CHEMICAL MONITORING OF POROSITY OF ANODICALLY FORMED LAYERS OF POROUS SILICON, Russian journal of applied chemistry, 66(10), 1993, pp. 1675-1677

Authors: IZIDINOV SO BLOKHINA AP ISMAILOVA LA

Citation: So. Izidinov et al., CHANGES IN THE KINETICS AND MECHANISM OF THE BASIC OXIDATION REACTIONOCCURRING UNDER THE ACTION OF LIGHT AT N-TYPE SILICON DURING ANODIC POROUS-LAYER FORMATION, Soviet electrochemistry, 28(9), 1992, pp. 1085-1090

Authors: IZIDINOV SO BLOKHINA AP NAZAROV VN

Citation: So. Izidinov et al., ANODIC FORMATION OF POROUS LAYERS WITH A GIVEN STRUCTURE ON N-TYPE SILICON, Journal of applied chemistry of the USSR, 65(5), 1992, pp. 875-879

Authors: BLOKHINA AP NAZAROV VN IZIDINOV SO

Citation: Ap. Blokhina et al., RELATIONSHIPS GOVERNING THE ANODIC FORMATION OF A POROUS LAYER ON N-SILICON UNDER THE INFLUENCE OF OPTICAL RADIATION, Journal of applied chemistry of the USSR, 65(12), 1992, pp. 2195-2200