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Results:
1-8
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Results: 8
Authors:
Toda, A
Ikarashi, N
Ono, H
Citation: A. Toda et al., Higher-order Laue zone line contrast in large-angle convergent-beam electron diffraction around a dislocation, J MICROSC O, 203, 2001, pp. 239-245
Authors:
Ikarashi, N
Watanabe, K
Miyamoto, Y
Citation: N. Ikarashi et al., Atomic structures at a Si-nitride/Si(001) interface, J APPL PHYS, 90(6), 2001, pp. 2683-2688
Authors:
Ono, H
Hosokawa, Y
Ikarashi, T
Shinoda, K
Ikarashi, N
Koyanagi, K
Yamaguchi, H
Citation: H. Ono et al., Formation mechanism of interfacial Si-oxide layers during postannealing ofTa2O5/Si, J APPL PHYS, 89(2), 2001, pp. 995-1002
Authors:
Ikarashi, N
Watanabe, K
Citation: N. Ikarashi et K. Watanabe, Quantitative characterization of roughness at SiO2/Si interfaces by using cross-sectional high-resolution transmission electron microscopy, JPN J A P 1, 39(3A), 2000, pp. 1278-1285
Authors:
Ikarashi, N
Watanabe, K
Miyamoto, Y
Citation: N. Ikarashi et al., High-resolution transmission electron microscopy of an atomic structure ata Si(001) oxidation front, PHYS REV B, 62(23), 2000, pp. 15989-15995
Authors:
Toda, A
Ikarashi, N
Ono, H
Citation: A. Toda et al., Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction, J CRYST GR, 210(1-3), 2000, pp. 341-345
Authors:
Ikarashi, N
Kobayashi, S
Inoue, N
Hosoi, N
Nishiyama, I
Ono, H
Citation: N. Ikarashi et al., Degradation mechanism of PZT caused by H-2 annealing, NEC RES DEV, 40(2), 1999, pp. 219-222
Authors:
Ikarashi, N
Hosoi, N
Citation: N. Ikarashi et N. Hosoi, Ti-O coordination at a Pb(Zr,Ti)O-3/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy, J APPL PHYS, 85(11), 1999, pp. 7874-7878
Risultati:
1-8
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