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Results:
1-13
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Results: 13
Authors:
Kuroda, N
Ikoma, H
Citation: N. Kuroda et H. Ikoma, Sb and Bi passivation effects on GaAs, JPN J A P 1, 40(11), 2001, pp. 6248-6253
Authors:
Tanemura, H
Kanazawa, K
Ikoma, H
Citation: H. Tanemura et al., GaN-passivation of GaAs with less plasma damages: Effects of input plasma power, substrate heating and post-thermal annealing, JPN J A P 1, 39(4A), 2000, pp. 1629-1634
Authors:
Oka, F
Tachikawa, M
Tsukuda, T
Ikoma, H
Citation: F. Oka et al., Effects of gas-flow-rate ratio on electrical characteristics and Fowler-Nordheim stress resistance of Si oxynitride grown with helicon-wave-excited N-2-Ar plasma, JPN J A P 1, 39(3A), 2000, pp. 1013-1021
Authors:
Tachikawa, M
Ikoma, H
Citation: M. Tachikawa et H. Ikoma, Effects of postannealing on electrical characteristics and Fowler-Nordheimcurrent stress resistance of Si oxynitride grown in helicon-wave-excited O-2-N-2-Ar plasma, JPN J A P 1, 39(3A), 2000, pp. 1022-1026
Authors:
Tsukuda, T
Ikoma, H
Citation: T. Tsukuda et H. Ikoma, Low-temperature growth of Si oxide with good electrical qualities using helicon-wave-excited O-2-Ar plasma and forming gas annealing, JPN J A P 1, 39(1), 2000, pp. 8-13
Authors:
Higami, S
Inoue, Y
Takeuchi, H
Ikoma, H
Kanba, M
Citation: S. Higami et al., Clinical significance of negative esophageal pressure in sleep apnea syndrome, PSY CLIN N, 54(3), 2000, pp. 334-335
Authors:
Kasahara, F
Kanazawa, K
Okamoto, N
Ikoma, H
Citation: F. Kasahara et al., Helicon-wave-excited plasma nitridation of GaAs after short-time plasma oxidation for fabrication of damage-free GaN/GaAs interface, JPN J A P 1, 38(12A), 1999, pp. 6597-6604
Authors:
Motegi, T
Tomita, J
Ikoma, H
Citation: T. Motegi et al., Al2O3/InP structure with less oxides of InP fabricated by helicon-volume excited O-2-Ar plasma treatment of Al/InP, JPN J A P 2, 38(4B), 1999, pp. L420-L423
Authors:
Okamoto, N
Kasahara, F
Ikoma, H
Citation: N. Okamoto et al., Growth of "oxide-less" GaN layer by helicon-wave excited N-2-Ar plasma treatment of Al/GaAs structure, JPN J A P 2, 38(4B), 1999, pp. L424-L426
Authors:
Morikita, S
Motegi, T
Ikoma, H
Citation: S. Morikita et al., Improved electrical characteristics of Al2O3/InP structure by combination of sulfur passivation and forming gas annealing, JPN J A P 2, 38(12B), 1999, pp. L1512-L1514
Authors:
Wada, S
Kanazawa, K
Okamoto, N
Ikoma, H
Citation: S. Wada et al., Effect of short-time helicon-wave excited N-2-Ar plasma treatment on the interface characteristic of GaAs, J VAC SCI B, 17(4), 1999, pp. 1516-1524
Authors:
Hara, A
Kasahara, F
Wada, S
Ikoma, H
Citation: A. Hara et al., Effects of helicon-wave excited N-2 plasma treatment on Fermi-level pinning in GaAs, J APPL PHYS, 85(6), 1999, pp. 3234-3240
Authors:
Kimura, S
Ikoma, H
Citation: S. Kimura et H. Ikoma, Fowler-Nordheim current injection and write/erase characteristics of metal-oxide-nitride-oxide-Si structure grown with helicon-wave excited plasma processing, J APPL PHYS, 85(1), 1999, pp. 551-557
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