Authors: Lee, CD Sagar, A Feenstra, RM Inoki, CK Kuan, TS Sarney, WL Salamanca-Riba, L

Citation: Cd. Lee et al., Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001), APPL PHYS L, 79(21), 2001, pp. 3428-3430

Authors: Kuan, TS Inoki, CK Hsu, Y Harris, DL Zhang, R Gu, S Kuech, TF

Citation: Ts. Kuan et al., Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_76-NIL_81

Authors: Hobart, KD Kub, FJ Fatemi, M Twigg, ME Thompson, PE Kuan, TS Inoki, CK

Citation: Kd. Hobart et al., Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides, J ELEC MAT, 29(7), 2000, pp. 897-900

Authors: Yi, SS Hansen, DM Inoki, CK Harris, DL Kuan, TS Kuech, TF

Citation: Ss. Yi et al., Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition, APPL PHYS L, 77(6), 2000, pp. 842-844