Authors: Ivanov, PA Levinshtein, ME Irvine, KG Kordina, O Palmour, JW Rumyantsev, SL Singh, R

Citation: Pa. Ivanov et al., High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage, ELECTR LETT, 35(16), 1999, pp. 1382-1383