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Results:
1-13
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Results: 13
Authors:
Endo, M
Ishido, T
Arai, M
Citation: M. Endo et al., Voice quality evaluation of carrier-class VoIP, NEC RES DEV, 42(2), 2001, pp. 166-168
Authors:
Ishido, T
Citation: T. Ishido, Kumamoto Prefectural College of Agriculture dormitory, Terunobu Fujimori, Yoshiaki Irie, Masahide Shibata, Hideo Nishiyama, architects, A U-ARCHIT, (371), 2001, pp. 138-139
Authors:
Ishido, T
Citation: T. Ishido, Awaji-Yumebutai, Tadao Ando Architect&Associates, A U-ARCHIT, (369), 2001, pp. 124-125
Authors:
Ishido, T
Citation: T. Ishido, Japanese scene 1 Niigata-City Performing Arts Center, Itsuko-Hasegawa-Atelier, A U-ARCHIT, (367), 2001, pp. 144-145
Authors:
Ogawa, M
Funato, M
Ishido, T
Fujita, S
Fujita, S
Citation: M. Ogawa et al., The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs, JPN J A P 2, 39(2A), 2000, pp. L69-L72
Authors:
Nomura, S
Ishido, T
Teranishi, J
Makiyama, K
Citation: S. Nomura et al., Long-term analysis of suprapubic cystostomy drainage in patients with neurogenic bladder, UROL INTERN, 65(4), 2000, pp. 185-189
Authors:
Ishido, T
Funato, M
Hamaguchi, A
Fujita, S
Fujita, S
Citation: T. Ishido et al., AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 280-285
Authors:
Funato, M
Ishido, T
Hamaguchi, A
Fujita, S
Fujita, S
Citation: M. Funato et al., Single-phase hexagonal GaN grown on AlAs/GaAs(001), APPL PHYS L, 77(2), 2000, pp. 244-246
Authors:
Funato, M
Ishido, T
Fujita, S
Fujita, S
Citation: M. Funato et al., Six-bilayer periodic structures in GaN grown on GaAs(001), APPL PHYS L, 76(3), 2000, pp. 330-332
Authors:
Ishido, T
Pritchett, JW
Citation: T. Ishido et Jw. Pritchett, Numerical simulation of electrokinetic potentials associated with subsurface fluid flow, J GEO R-SOL, 104(B7), 1999, pp. 15247-15259
Authors:
Funato, M
Ogawa, M
Ishido, T
Fujita, S
Fujita, S
Citation: M. Funato et al., MOVPE growth of high quality cubic GaN on GaAs: The role of growth rates, PHYS ST S-A, 176(1), 1999, pp. 509-512
Authors:
Tachibana, H
Ishido, T
Ogawa, M
Funato, M
Fujita, S
Fujita, S
Citation: H. Tachibana et al., Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN, J CRYST GR, 196(1), 1999, pp. 41-46
Authors:
Yano, Y
Ishido, T
Citation: Y. Yano et T. Ishido, Numerical investigation of production behavior of deep geothermal reservoirs at super-critical conditions, GEOTHERMICS, 27(5-6), 1998, pp. 705-721
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