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Results:
1-17
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Results: 17
Authors:
Hieslmair, H
Balasubramanian, S
Istratov, AA
Weber, ER
Citation: H. Hieslmair et al., Gettering simulator: physical basis and algorithm, SEMIC SCI T, 16(7), 2001, pp. 567-574
Authors:
Sachdeva, R
Istratov, AA
Weber, ER
Citation: R. Sachdeva et al., Recombination activity of copper in silicon, APPL PHYS L, 79(18), 2001, pp. 2937-2939
Authors:
Ganichev, SD
Ziemann, E
Prettl, W
Yassievich, IN
Istratov, AA
Weber, ER
Citation: Sd. Ganichev et al., Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors, PHYS REV B, 61(15), 2000, pp. 10361-10365
Authors:
Istratov, AA
Hieslmair, H
Weber, ER
Citation: Aa. Istratov et al., Iron contamination in silicon technology, APPL PHYS A, 70(5), 2000, pp. 489-534
Authors:
Istratov, AA
Flink, C
Hieslmair, H
McHugo, SA
Weber, ER
Citation: Aa. Istratov et al., Diffusion, solubility and gettering of copper in silicon, MAT SCI E B, 72(2-3), 2000, pp. 99-104
Authors:
Istratov, AA
Hieslmair, H
Weber, ER
Citation: Aa. Istratov et al., Advanced Gettering techniques in ULSI technology, MRS BULL, 25(6), 2000, pp. 33-38
Authors:
Istratov, AA
Flink, C
Weber, ER
Citation: Aa. Istratov et al., Impact of the unique physical properties of copper in silicon on characterization of copper diffusion barriers, PHYS ST S-B, 222(1), 2000, pp. 261-277
Authors:
Flink, C
Feick, H
McHugo, SA
Seifert, W
Hieslmair, H
Heiser, T
Istratov, AA
Weber, ER
Citation: C. Flink et al., Out-diffusion and precipitation of copper in silicon: An electrostatic model, PHYS REV L, 85(23), 2000, pp. 4900-4903
Authors:
Kohno, H
Hieslmair, H
Istratov, AA
Weber, ER
Citation: H. Kohno et al., Temperature dependence of the iron donor level in silicon at device processing temperatures, APPL PHYS L, 76(19), 2000, pp. 2734-2736
Authors:
Istratov, AA
Hieslmair, H
Weber, ER
Citation: Aa. Istratov et al., Iron and its complexes in silicon, APPL PHYS A, 69(1), 1999, pp. 13-44
Authors:
Heiser, T
Istratov, AA
Flink, C
Weber, ER
Citation: T. Heiser et al., Electrical characterization of copper related defect reactions in silicon, MAT SCI E B, 58(1-2), 1999, pp. 149-154
Authors:
Istratov, AA
Hieslmair, H
Weber, ER
Citation: Aa. Istratov et al., What do we know about iron in silicon after 45 yr of research, PHYSICA B, 274, 1999, pp. 412-415
Authors:
Flink, C
Feick, H
McHugo, SA
Mohammed, A
Seifert, W
Hieslmair, H
Heiser, T
Istratov, AA
Weber, ER
Citation: C. Flink et al., Formation of copper precipitates in silicon, PHYSICA B, 274, 1999, pp. 437-440
Authors:
Hieslmair, H
Istratov, AA
Flink, C
McHugo, SA
Weber, ER
Citation: H. Hieslmair et al., Experiments and computer simulations of iron profiles in p/p(+) silicon: segregation and the position of the iron donor level, PHYSICA B, 274, 1999, pp. 441-444
Authors:
Istratov, AA
Vyvenko, OF
Citation: Aa. Istratov et Of. Vyvenko, Exponential analysis in physical phenomena, REV SCI INS, 70(2), 1999, pp. 1233-1257
Authors:
Seibt, M
Hedemann, H
Istratov, AA
Riedel, F
Sattler, A
Schroter, W
Citation: M. Seibt et al., Structural and electrical properties of metal silicide precipitates in silicon, PHYS ST S-A, 171(1), 1999, pp. 301-310
Authors:
Hieslmair, H
Istratov, AA
Weber, ER
Citation: H. Hieslmair et al., Time-temperature profiles for optimal internal gettering of iron in silicon, SEMIC SCI T, 13(12), 1998, pp. 1401-1406
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