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Results:
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Results: 13
Authors:
Honda, Y
Iyechika, Y
Maeda, T
Miyake, H
Hiramatsu, K
Citation: Y. Honda et al., Transmission electron microscopy investigation of dislocations in GaN layer grown by facet-controlled epitaxial lateral overgrowth, JPN J A P 2, 40(4A), 2001, pp. L309-L312
Authors:
Hiramatsu, K
Haino, M
Yamaguchi, M
Miyake, H
Motogaito, A
Sawaki, N
Iyechika, Y
Maeda, T
Citation: K. Hiramatsu et al., GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE, MAT SCI E B, 82(1-3), 2001, pp. 62-64
Authors:
Onozu, T
Miura, R
Takami, S
Kubo, M
Miyamoto, A
Iyechika, Y
Maeda, T
Citation: T. Onozu et al., Investigation of thermal annealing process of GaN layer on sapphire by molecular dynamics, JPN J A P 1, 39(7B), 2000, pp. 4400-4403
Authors:
Onozu, T
Inaba, Y
Takami, S
Kubo, M
Miyamoto, A
Iyechika, Y
Maeda, T
Citation: T. Onozu et al., Investigation of initial growth process of GaN film on sapphire using computational chemistry, JPN J A P 1, 39(4B), 2000, pp. 2380-2384
Authors:
Haino, M
Yamaguchi, M
Miyake, H
Motogaito, A
Hiramatsu, K
Kawaguchi, Y
Sawaki, N
Iyechika, Y
Maeda, T
Citation: M. Haino et al., Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy, JPN J A P 2, 39(5B), 2000, pp. L449-L452
Authors:
Miyake, H
Yamaguchi, M
Haino, M
Motogaito, A
Hiramatsu, K
Nambu, S
Kawaguchi, Y
Sawaki, N
Iyechika, Y
Maeda, T
Akasaki, I
Citation: H. Miyake et al., Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE, MRS I J N S, 5, 2000, pp. NIL_58-NIL_63
Authors:
Hiramatsu, K
Motogaito, A
Miyake, H
Honda, Y
Iyechika, Y
Maeda, T
Bertram, F
Christen, J
Hoffmann, A
Citation: K. Hiramatsu et al., Crystalline and optical properties of ELO GaN by HVPE using tungsten mask, IEICE TR EL, E83C(4), 2000, pp. 620-626
Authors:
Shimada, M
Okuyama, K
Setyawan, H
Iyechika, Y
Maeda, T
Citation: M. Shimada et al., Effects of pressure and gas feed rate on growth rate profile of GaN thin film in vertical MOCVD reactor, KAG KOG RON, 26(6), 2000, pp. 804-810
Authors:
Hiramatsu, K
Nishiyama, K
Onishi, M
Mizutani, H
Narukawa, M
Motogaito, A
Miyake, H
Iyechika, Y
Maeda, T
Citation: K. Hiramatsu et al., Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO), J CRYST GR, 221, 2000, pp. 316-326
Authors:
Onozu, T
Gunji, I
Miura, R
Ammal, SSC
Kubo, M
Teraishi, K
Miyamoto, A
Iyechika, Y
Maeda, T
Citation: T. Onozu et al., Computational studies on GaN surface polarity and InN/GaN heterostructuresby density functional theory and molecular dynamics, JPN J A P 1, 38(4B), 1999, pp. 2544-2548
Authors:
Sone, H
Nambu, S
Kawaguchi, Y
Yamaguchi, M
Miyake, H
Hiramatsu, K
Iyechika, Y
Maeda, T
Sawaki, N
Citation: H. Sone et al., Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy, JPN J A P 2, 38(4A), 1999, pp. L356-L359
Authors:
Honda, Y
Iyechika, Y
Maeda, T
Miyake, H
Hiramatsu, K
Sone, H
Sawaki, N
Citation: Y. Honda et al., Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves, JPN J A P 2, 38(11B), 1999, pp. L1299-L1302
Authors:
Hiramatsu, K
Nishiyama, K
Motogaito, A
Miyake, H
Iyechika, Y
Maeda, T
Citation: K. Hiramatsu et al., Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth, PHYS ST S-A, 176(1), 1999, pp. 535-543
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