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Results: 1-2 |
Results: 2
NUMERICAL-SIMULATION OF CREATION-PASSIVATION KINETICS OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING WITH VARIOUS GATE BIASES
Authors: RISTIC GS PEJOVIC MM JAKSIC AB
Citation: Gs. Ristic et al., NUMERICAL-SIMULATION OF CREATION-PASSIVATION KINETICS OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING WITH VARIOUS GATE BIASES, Microelectronic engineering, 40(2), 1998, pp. 51-60
MODELING OF KINETICS OF CREATION AND PASSIVATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS DURING POSTIRRADIATION ANNEALING
Authors: RISTIC GS PEJOVIC MM JAKSIC AB
Citation: Gs. Ristic et al., MODELING OF KINETICS OF CREATION AND PASSIVATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS DURING POSTIRRADIATION ANNEALING, Journal of applied physics, 83(6), 1998, pp. 2994-3000
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