NUMERICAL-SIMULATION OF CREATION-PASSIVATION KINETICS OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING WITH VARIOUS GATE BIASES
Gs. Ristic et al., NUMERICAL-SIMULATION OF CREATION-PASSIVATION KINETICS OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING WITH VARIOUS GATE BIASES, Microelectronic engineering, 40(2), 1998, pp. 51-60
Influence of gate bias on creation-passivation processes of interface
traps in irradiated n-channel MOS transistors during thermal annealing
has been investigated. The experimental results, which show the depen
dence of these processes on gate bias, are explained by combined hydro
gen-water (H-W) model. The modelling of kinetics of creation and passi
vation of interface traps, based on bimolecular theory and numerical a
nalysis, is also performed. Numerical simulation shows that H-W model
predicts the maximum of interface trap density and latent interface tr
ap buildup during thermal annealing. (C) 1998 Elsevier Science B.V. Al
l rights reserved.