NUMERICAL-SIMULATION OF CREATION-PASSIVATION KINETICS OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING WITH VARIOUS GATE BIASES

Influence of gate bias on creation-passivation processes of interface traps in irradiated n-channel MOS transistors during thermal annealing has been investigated. The experimental results, which show the depen dence of these processes on gate bias, are explained by combined hydro gen-water (H-W) model. The modelling of kinetics of creation and passi vation of interface traps, based on bimolecular theory and numerical a nalysis, is also performed. Numerical simulation shows that H-W model predicts the maximum of interface trap density and latent interface tr ap buildup during thermal annealing. (C) 1998 Elsevier Science B.V. Al l rights reserved.