Authors: JANSSENS KGF VANDERBIEST O VANHELLEMONT J MAES HE

Citation: Kgf. Janssens et al., ASSESSMENT OF THE QUANTITATIVE CHARACTERIZATION OF LOCALIZED STRAIN USING ELECTRON-DIFFRACTION CONTRAST IMAGING, Ultramicroscopy, 69(3), 1997, pp. 151-167

Authors: JANSSENS KGF VANDERBIEST O VANHELLEMONT J MAES HE HULL R BEAN JC

Citation: Kgf. Janssens et al., LOCALIZED STRAIN CHARACTERIZATION IN SEMICONDUCTOR STRUCTURES USING ELECTRON-DIFFRACTION CONTRAST IMAGING, Materials science and technology, 11(1), 1995, pp. 66-71

Authors: JANSSENS KGF VANDERBIEST O VANHELLEMONT J MAES HE HULL R

Citation: Kgf. Janssens et al., CHARACTERIZATION OF STRAIN IN AN ADVANCED SEMICONDUCTOR-LASER STRUCTURE WITH NANOMETER RANGE RESOLUTION USING A NEW ALGORITHM FOR ELECTRON-DIFFRACTION CONTRAST IMAGING INTERPRETATION, Applied physics letters, 67(11), 1995, pp. 1530-1532

Authors: JANSSENS KGF VANHELLEMONT J VANDERBIEST O

Citation: Kgf. Janssens et al., A NEW SOFTWARE PACKAGE FOR INTERPRETING ELECTRON-DIFFRACTION CONTRASTIMAGES OF ARBITRARY DISPLACEMENT-FIELDS - SIMCON, Microscopy research and technique, 25(2), 1993, pp. 171-172