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Results: 1-10 |
Results: 10
OPTICAL INVESTIGATION OF INGAAS GAAS HETEROINTERFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: JEON HI JEONG MS SHIM HW SHIN YG LIM KY SUH EK LEE HJ
Citation: Hi. Jeon et al., OPTICAL INVESTIGATION OF INGAAS GAAS HETEROINTERFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of crystal growth, 171(3-4), 1997, pp. 349-356
SCHOTTKY-BARRIER HEIGHTS AND CONDUCTION-BAND OFFSETS OF IN1-XGAXAS1-YPY LATTICE-MATCHED TO GAAS
Authors: LEE JK CHO YH CHOE BD KIM KS JEON HI LIM H RAZEGHI M
Citation: Jk. Lee et al., SCHOTTKY-BARRIER HEIGHTS AND CONDUCTION-BAND OFFSETS OF IN1-XGAXAS1-YPY LATTICE-MATCHED TO GAAS, Applied physics letters, 71(7), 1997, pp. 912-914
LIGHT-EMITTING MECHANISM AND PORE-SIZE CONTROL OF POROUS SILICON LAYERS
Authors: SEO YH NAHM KS JEON HI SUH EK LEE YH LEE HJ HWANG YG
Citation: Yh. Seo et al., LIGHT-EMITTING MECHANISM AND PORE-SIZE CONTROL OF POROUS SILICON LAYERS, Journal of the Korean Physical Society, 28, 1995, pp. 75-79
PHOTOREFLECTANCE AND RAMAN-SCATTERING STUDIES ON INXGA1-XAS GAAS STRAINED HETEROSTRUCTURE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: HWANG IS LEE C KIM JE PARK HY CHA SS JEON HI SUH EK LIM KY LEE HJ
Citation: Is. Hwang et al., PHOTOREFLECTANCE AND RAMAN-SCATTERING STUDIES ON INXGA1-XAS GAAS STRAINED HETEROSTRUCTURE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of the Korean Physical Society, 28, 1995, pp. 154-158
MAGNETOPHOTOLUMINESCENCE OF ACCEPTOR NEAR THE INTERFACE OF ALXGA1-XASALYGA1-YAS HETEROSTRUCTURE SPONTANEOUSLY GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: ZHU JB JEON HI CHA SS SHIN YG LEE BC LIM KY SUH EK LEE HJ
Citation: Jb. Zhu et al., MAGNETOPHOTOLUMINESCENCE OF ACCEPTOR NEAR THE INTERFACE OF ALXGA1-XASALYGA1-YAS HETEROSTRUCTURE SPONTANEOUSLY GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of the Korean Physical Society, 28, 1995, pp. 184-187
MAGNETOPHOTOLUMINESCENCE MEASUREMENT OF THE FORMATION TIME OF AN EXCITON IN ALXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/
Authors: ZHU JB JEON HI SUH EK LEE HJ HWANG YG
Citation: Jb. Zhu et al., MAGNETOPHOTOLUMINESCENCE MEASUREMENT OF THE FORMATION TIME OF AN EXCITON IN ALXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/, Physical review. B, Condensed matter, 52(23), 1995, pp. 16353-16356
MAGNETOPHOTOLUMINESCENCE OF ACCEPTORS NEAR THE INTERFACES OF ALXGA1-XAS ALYGA1-YAS HETEROSTRUCTURES/
Authors: ZHU JB JEON HI CHA SS SHIN YG LEE BC LIM KY SUH EK LEE HJ HWANG YG
Citation: Jb. Zhu et al., MAGNETOPHOTOLUMINESCENCE OF ACCEPTORS NEAR THE INTERFACES OF ALXGA1-XAS ALYGA1-YAS HETEROSTRUCTURES/, Journal of applied physics, 78(3), 1995, pp. 1975-1979
PHOTOLUMINESCENCE AND RAMAN-SCATTERING ANALYSIS OF INXGA1-XAS EPILAYERS GROWN ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: JEON HI CHA SS LIM KY SUH EK LEE HJ
Citation: Hi. Jeon et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING ANALYSIS OF INXGA1-XAS EPILAYERS GROWN ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of the Korean Physical Society, 27(2), 1994, pp. 237-240
ZONE-CENTER OPTICAL PHONONS IN INXGA1-X AS ALLOYS
Authors: PIAO ZS JEON HI SUH EK LEE HJ
Citation: Zs. Piao et al., ZONE-CENTER OPTICAL PHONONS IN INXGA1-X AS ALLOYS, Physical review. B, Condensed matter, 50(24), 1994, pp. 18644-18646
INTENSITY VARIATION OF PHOTOLUMINESCENCE IN INXGA1-XAS GAAS MULTI-QUANTUM-WELL STRUCTURES/
Authors: PIAO ZS JEON HI CHA SS LIM KY SUH EK LEE HJ
Citation: Zs. Piao et al., INTENSITY VARIATION OF PHOTOLUMINESCENCE IN INXGA1-XAS GAAS MULTI-QUANTUM-WELL STRUCTURES/, Applied physics letters, 65(3), 1994, pp. 333-335
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