OPTICAL INVESTIGATION OF INGAAS GAAS HETEROINTERFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Photoluminescence (PL) measurements were carried out on strained In0.2 Ga0.8As/GaAs quantum well structures. By analyzing the transition ener gies and linewidths as functions of temperature as well as the excitat ion intensity, we found that well width fluctuations are up to six mon olayers depending upon the sample structure. PL peak energies and line widths vary with temperature and the excitation intensity due to the c hange of the distribution ratio of energy levels generated by the stru ctural disorder at the interfaces.