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Results:
1-13
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Results: 13
Authors:
PALMA A
GODOY A
JIMENEZTEJADA JA
CARCELLER JE
LOPEZVILLANUEVA JA
Citation: A. Palma et al., QUANTUM 2-DIMENSIONAL CALCULATION OF TIME CONSTANTS OF RANDOM TELEGRAPH SIGNALS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Physical review. B, Condensed matter, 56(15), 1997, pp. 9565-9574
Authors:
GODOY A
GAMIZ F
PALMA A
JIMENEZTEJADA JA
BANQUERI J
LOPEZVILLANUEVA JA
Citation: A. Godoy et al., INFLUENCE OF MOBILITY FLUCTUATIONS ON RANDOM TELEGRAPH SIGNAL AMPLITUDE IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 82(9), 1997, pp. 4621-4628
Authors:
GODOY A
JIMENEZTEJADA JA
PALMA A
CARTUJO P
Citation: A. Godoy et al., INFLUENCE OF THE DOPING PROFILE AND DEEP-LEVEL TRAP CHARACTERISTICS ON GENERATION-RECOMBINATION NOISE, Journal of applied physics, 82(7), 1997, pp. 3351-3357
Authors:
GODOY A
GAMIZ F
PALMA A
JIMENEZTEJADA JA
CARCELLER JE
Citation: A. Godoy et al., RANDOM TELEGRAPH SIGNAL AMPLITUDE IN SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Applied physics letters, 70(16), 1997, pp. 2153-2155
Authors:
JIMENEZTEJADA JA
PALMA A
GODOY A
CARCELLER JE
Citation: Ja. Jimeneztejada et al., ANOMALOUS BEHAVIOR OF THE ELECTRIC-FIELD IN HIGHLY-COMPENSATED NONUNIFORM SEMICONDUCTORS AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 99-103
Authors:
PALMA A
JIMENEZTEJADA JA
GODOY A
CARTUJO P
Citation: A. Palma et al., CAPTURE PROCESS BY SHALLOW DONORS IN SILICON AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 105-110
Authors:
PALMA A
JIMENEZTEJADA JA
GODOY A
LOPEZVILLANUEVA JA
CARCELLER JE
Citation: A. Palma et al., MONTE-CARLO STUDY OF THE STATISTICS OF ELECTRON-CAPTURE BY SHALLOW DONORS IN SILICON AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 51(20), 1995, pp. 14147-14151
Authors:
LOPEZVILLANUEVA JA
MELCHOR I
GAMIZ F
BANQUERI J
JIMENEZTEJADA JA
Citation: Ja. Lopezvillanueva et al., A MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Solid-state electronics, 38(1), 1995, pp. 203-210
Authors:
PALMA A
JIMENEZTEJADA JA
GODOY A
MELCHOR I
CARTUJO P
Citation: A. Palma et al., MONTE-CARLO SIMULATION OF MULTIPHONON CAPTURE MECHANISM BY DEEP NEUTRAL IMPURITIES IN SI IN THE PRESENCE OF AN ELECTRIC-FIELD, Journal of applied physics, 78(9), 1995, pp. 5448-5453
Authors:
PALMA A
JIMENEZTEJADA JA
MELCHOR I
LOPEZVILLANUEVA JA
CARCELLER JE
Citation: A. Palma et al., COMPREHENSIVE MONTE-CARLO SIMULATION OF THE NONRADIATIVE CARRIER CAPTURE PROCESS BY IMPURITIES IN SEMICONDUCTORS, Journal of applied physics, 77(5), 1995, pp. 1998-2005
Authors:
GODOY A
PALMA A
JIMENEZTEJADA JA
CARCELLER JE
Citation: A. Godoy et al., INFLUENCE OF THE POSITION OF DEEP LEVELS ON GENERATION-RECOMBINATION NOISE, Applied physics letters, 67(24), 1995, pp. 3581-3583
Authors:
LOPEZVILLANUEVA JA
GAMIZ F
MELCHOR I
JIMENEZTEJADA JA
Citation: Ja. Lopezvillanueva et al., DENSITY-OF-STATES OF A 2-DIMENSIONAL ELECTRON-GAS INCLUDING NONPARABOLICITY, Journal of applied physics, 75(8), 1994, pp. 4267-4269
Authors:
GAMIZ F
LOPEZVILLANUEVA JA
JIMENEZTEJADA JA
MELCHOR I
PALMA A
Citation: F. Gamiz et al., A COMPREHENSIVE MODEL FOR COULOMB SCATTERING IN INVERSION-LAYERS, Journal of applied physics, 75(2), 1994, pp. 924-934
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