Citation: Ea. Stach et al., ZIN-SITU STUDIES OF THE INTERACTION OF DISLOCATIONS WITH POINT-DEFECTS DURING ANNEALING OF ION-IMPLANTED SI SIGE/SI(001) HETEROSTRUCTURES/, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 294-307
Citation: Me. Law et al., EFFECT OF THE SILICON OXIDE INTERFACE ON INTERSTITIALS - DI-INTERSTITIAL RECOMBINATION/, Journal of applied physics, 84(7), 1998, pp. 3555-3560
Authors:
KRISHNAMOORTHY V
MOLLER K
JONES KS
VENABLES D
JACKSON J
RUBIN L
Citation: V. Krishnamoorthy et al., TRANSIENT ENHANCED DIFFUSION AND DEFECT MICROSTRUCTURE IN HIGH-DOSE, LOW-ENERGY AS+ IMPLANTED SI, Journal of applied physics, 84(11), 1998, pp. 5997-6002
Citation: K. Moller et al., CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF (311) DEFECTS FROM SI IMPLANTATION INTO SILICON, Applied physics letters, 72(20), 1998, pp. 2547-2549
Authors:
DATTA R
ALLEN LP
DOLAN RP
JONES KS
FARLEY M
Citation: R. Datta et al., INDEPENDENT IMPLANT PARAMETER EFFECTS ON SIMOX SOI DISLOCATION FORMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 8-13
Authors:
JONES KS
CHEN J
BHARATAN S
JACKSON J
RUBIN L
PUGALAMBERS M
VENABLES D
Citation: Ks. Jones et al., THE EFFECT OF DOSE-RATE AND IMPLANT TEMPERATURE ON TRANSIENT ENHANCEDDIFFUSION IN BORON-IMPLANTED SILICON, Journal of electronic materials, 26(11), 1997, pp. 1361-1364
Citation: G. Kukolj et al., SUBCELLULAR LOCATION OF AVIAN-SARCOMA VIRUS AND HUMAN-IMMUNODEFICIENCY-VIRUS TYPE-1 INTEGRASES, Journal of virology, 71(1), 1997, pp. 843-847
Authors:
HERNER SB
JONES KS
GOSSMANN HJ
TUNG RT
POATE JM
LUFTMAN HS
Citation: Sb. Herner et al., INVESTIGATION OF MECHANISMS OF VACANCY GENERATION IN SILICON IN THE PRESENCE OF A TISI2 FILM, Journal of applied physics, 82(2), 1997, pp. 583-588
Authors:
WARREN WL
SEAGER CH
SUN SS
NAMAN A
HOLLOWAY PH
JONES KS
SOININEN E
Citation: Wl. Warren et al., MICROSTRUCTURE AND ATOMIC EFFECTS ON THE ELECTROLUMINESCENT EFFICIENCY OF SRS-CE THIN-FILM DEVICES, Journal of applied physics, 82(10), 1997, pp. 5138-5143
Authors:
JONES KS
MOLLER K
CHEN J
PUGALAMBERS M
FREER B
BERSTEIN J
RUBIN L
Citation: Ks. Jones et al., EFFECT OF IMPLANT TEMPERATURE ON TRANSIENT ENHANCED DIFFUSION OF BORON IN REGROWN SILICON AFTER AMORPHIZATION BY SI+ OR GE+ IMPLANTATION, Journal of applied physics, 81(9), 1997, pp. 6051-6055
Authors:
LIU J
KRISHNAMOORTHY V
GOSSMAN HJ
RUBIN L
LAW ME
JONES KS
Citation: J. Liu et al., THE EFFECT OF BORON IMPLANT ENERGY ON TRANSIENT ENHANCED DIFFUSION INSILICON, Journal of applied physics, 81(4), 1997, pp. 1656-1660
Authors:
HERNER SB
KRISHNAMOORTHY V
JONES KS
MOGI TK
THOMPSON MO
GOSSMANN HJ
Citation: Sb. Herner et al., EXTRINSIC DISLOCATION LOOP BEHAVIOR IN SILICON WITH A THERMALLY GROWNSILICON-NITRIDE FILM, Journal of applied physics, 81(11), 1997, pp. 7175-7180
Citation: Jw. Xu et al., A COMPARISON OF BORON AND PHOSPHORUS DIFFUSION AND DISLOCATION LOOP GROWTH FROM SILICON IMPLANTS INTO SILICON, Journal of applied physics, 81(1), 1997, pp. 107-111
Authors:
ROBERTSON LS
LILAK A
LAW ME
JONES KS
KRINGHOJ PS
RUBIN LM
JACKSON J
SIMONS DS
CHI P
Citation: Ls. Robertson et al., THE EFFECT OF DOSE-RATE ON INTERSTITIAL RELEASE FROM THE END-OF-RANGEIMPLANT DAMAGE REGION IN SILICON, Applied physics letters, 71(21), 1997, pp. 3105-3107
Citation: Ra. Ryono et al., PRESCRIBING PRACTICE AND COST OF ANTIBACTERIAL PROPHYLAXIS FOR SURGERY AT A US VETERANS AFFAIRS HOSPITAL, PharmacoEconomics, 10(6), 1996, pp. 630-643
Authors:
HERNER SB
GILA BP
JONES KS
GOSSMANN HJ
POATE JM
LUFTMAN HS
Citation: Sb. Herner et al., SURFACE ROUGHNESS-INDUCED ARTIFACTS IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILING AND A SIMPLE TECHNIQUE TO SMOOTH THE SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3593-3595
Citation: Jr. Kim et Ks. Jones, DEGRADATION OF II-VI ZNSE-BASED SINGLE-QUANTUM-WELL LIGHT-EMITTING DEVICES, Critical reviews in solid state and materials sciences, 21(1), 1996, pp. 1-76
Authors:
JASPER C
MORTON R
LAU SS
HAYNES TE
MAYER JW
JONES KS
Citation: C. Jasper et al., DOSE-RATE EFFECTS IN SILICON-IMPLANTED GALLIUM-ARSENIDE FROM LOW TO HIGH-DOSES, Journal of electronic materials, 25(1), 1996, pp. 107-111