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Results: 1-10 |
Results: 10
HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER
Authors: JONGSTE JF LI X LOKKER JP JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER, Microelectronic engineering, 37-8(1-4), 1997, pp. 319-327
REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER
Authors: SABOURET E SCHAFFNIT C JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: E. Sabouret et al., REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER, Microelectronic engineering, 37-8(1-4), 1997, pp. 353-363
MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS
Authors: JONGSTE JF LOKKER JP JANSSEN GCAM RADELAAR S TORRES J PALLEAU J
Citation: Jf. Jongste et al., MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS, Microelectronic engineering, 33(1-4), 1997, pp. 39-46
IN-SITU X-RAY-DIFFRACTION STUDY OF THE FORMATION OF TISI2-C49 PHASE FROM TI-SI MULTILAYERS ON SI(100)
Authors: SARIEL J CHEN HD JONGSTE JF RADELAAR S
Citation: J. Sariel et al., IN-SITU X-RAY-DIFFRACTION STUDY OF THE FORMATION OF TISI2-C49 PHASE FROM TI-SI MULTILAYERS ON SI(100), Materials chemistry and physics, 40(2), 1995, pp. 82-86
INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD
Authors: JONGSTE JF OOSTERLAKEN TGM LEUSINK GJ VANDERJEUGD CA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD, Applied surface science, 91(1-4), 1995, pp. 162-168
STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES
Authors: LEUSINK GJ LOKKER JP VANDENHOMBERG MJC JONGSTE JF OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES, Applied surface science, 91(1-4), 1995, pp. 215-219
THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE
Authors: VANDERJEUGD CA LEUSINK GJ OOSTERLAKEN TGM JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: Ca. Vanderjeugd et al., THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE, Journal of the Electrochemical Society, 142(4), 1995, pp. 1326-1332
DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING
Authors: JONGSTE JF OOSTERLAKEN TGM BART GCJ JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING, Journal of applied physics, 75(6), 1994, pp. 2830-2836
PROCEEDINGS OF THE 5TH ROPEAN-WORKSHOP-ON-REFRACTORY-METALS-AND-SILICIDES - SINT MICHIELSGESTEL, THE NETHERLANDS - MARCH 29-31, 1993 - PREFACE
Authors: JANSSEN GCAM JONGSTE JF RADELAAR E
Citation: Gcam. Janssen et al., PROCEEDINGS OF THE 5TH ROPEAN-WORKSHOP-ON-REFRACTORY-METALS-AND-SILICIDES - SINT MICHIELSGESTEL, THE NETHERLANDS - MARCH 29-31, 1993 - PREFACE, Applied surface science, 73, 1993, pp. 180000007-180000007
KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS
Authors: JONGSTE JF ALKEMADE PFA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3869-3879
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