REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER

Authors
SABOURET E SCHAFFNIT C JONGSTE JF JANSSEN GCAM RADELAAR S
Citation
E. Sabouret et al., REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER, Microelectronic engineering, 37-8(1-4), 1997, pp. 353-363
Citations number
3
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
37-8
Issue
1-4
Year of publication
1997
Pages
353 - 363
Database
ISI
SICI code
0167-9317(1997)37-8:1-4<353:RIEOMS>2.0.ZU;2-R
Abstract
Dry etching of a stack consisting of an aluminium copper alloy, WGe ba rrier and Ti adhesion layer has been investigated in a chlorine-based plasma chemistry employing a Cl-2, SiCl4, He mixture. Various aspects of the etching of the metal stack including profile control, etch rate and selectivity to oxide are discussed in detail.