Authors: FUTAGI T TACHIKAWA A JONO A MORIKAWA Y AIGO T MORITANI A

Citation: T. Futagi et al., MEASUREMENT OF CARRIER CONCENTRATION AT THE GAAS-SI INTERFACE IN GAASON SI BY RAMAN-SCATTERING, JPN J A P 1, 35(12A), 1996, pp. 6013-6016

Authors: AIGO T GOTO M OHTA Y JONO A TACHIKAWA A MORITANI A

Citation: T. Aigo et al., THRESHOLD VOLTAGE UNIFORMITY AND CHARACTERIZATION OF MICROWAVE PERFORMANCE FOR GAAS ALGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN ON SI SUBSTRATES/, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 527-534

Authors: JONO A TACHIKAWA A AIGO T MORITANI A

Citation: A. Jono et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ANNEALED SI IN H-2, Journal of crystal growth, 145(1-4), 1994, pp. 353-357

Authors: AIGO T JONO A TACHIKAWA A HIRATSUKA R MORITANI A

Citation: T. Aigo et al., HIGH UNIFORMITY OF THRESHOLD VOLTAGE FOR GAAS ALGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN ON A SI SUBSTRATE/, Applied physics letters, 64(23), 1994, pp. 3127-3129

Authors: AIGO T YASHIRO H GOTO M JONO A TACHIKAWA A MORITANI A

Citation: T. Aigo et al., THERMAL-RESISTANCE AND ELECTRONIC CHARACTERISTICS FOR HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN ON SI AND GAAS SUBSTRATES BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 32(12A), 1993, pp. 5508-5513