METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ANNEALED SI IN H-2

The preheating temperature dependence of the surface morphology and cr ystallinity of GaAs grown by metalorganic chemical vapor deposition (M OCVD) on Si annealed in H-2 at 1100 degrees C within a different furna ce is investigated by atomic force microscopy and X-ray diffraction me asurements. GaAs epi-layers with good surface morphology and crystalli nity are successfully grown on the annealed Si with preheating as low as 700 degrees C. We believe that surface double steps formed by the s urface reconstruction during high temperature annealing in H-2 and sur face passivation by the hydrogen termination play very important roles in lowering the preheating temperature for the growth of GaAs on anne aled Si in H-2.