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Results:
1-14
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Results: 14
Authors:
LUKYANCHUK I
JORIO A
PIMENTA MA
Citation: I. Lukyanchuk et al., BASAL-PLANE INCOMMENSURATE PHASES IN HEXAGONAL-CLOSE-PACKED STRUCTURES, Physical review. B, Condensed matter, 57(9), 1998, pp. 5086-5092
Authors:
JORIO A
DANTAS MSS
PINHEIRO CB
SPEZIALI NL
PIMENTA MA
Citation: A. Jorio et al., ANOMALOUS BEHAVIOR OF THE INTERNAL STRETCHING MODES ABOVE AND BELOW THE INCOMMENSURATE PHASE-TRANSITION OF CS2HGBR4, Physical review. B, Condensed matter, 57(1), 1998, pp. 203-210
Authors:
PINHEIRO CB
JORIO A
PIMENTA MA
SPEZIALI NL
Citation: Cb. Pinheiro et al., STRUCTURAL-ANALYSIS OF CS2HGBR4 IN NORMAL, INCOMMENSURATE AND TWINNEDPHASES, Acta crystallographica. Section B, Structural science, 54, 1998, pp. 197-203
Authors:
JORIO A
CARLONE C
PARENTEAU M
AKTIK C
ROWELL NL
Citation: A. Jorio et al., FORMATION OF EL2, AS(GA) AND U-BAND IN IRRADIATED GAAS - EFFECTS OF ANNEALING, Journal of applied physics, 80(3), 1996, pp. 1364-1369
Authors:
KHANNA SM
HOUDAYER A
JORIO A
CARLONE C
PARENTEAU M
GERDES JW
Citation: Sm. Khanna et al., NUCLEAR RADIATION DISPLACEMENT DAMAGE PREDICTION IN GALLIUM-ARSENIDE THROUGH LOW-TEMPERATURE PHOTOLUMINESCENCE MEASUREMENTS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2601-2608
Authors:
JORIO A
CARLONE C
ROWELL NL
HOUDAYER A
PARENTEAU M
Citation: A. Jorio et al., NATIVE DEFECTS IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AND METALLORGANIC CHEMICAL-VAPOR-DEPOSITION - EFFECTS OF IRRADIATION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 160-165
Authors:
PARENTEAU M
WU FM
JORIO A
CARLONE C
Citation: M. Parenteau et al., PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS, Journal of applied physics, 77(10), 1995, pp. 5185-5190
Authors:
KHANNA SM
JORIO A
CARLONE C
PARENTEAU M
HOUDAYER A
GERDES JW
Citation: Sm. Khanna et al., PARTICLE DEPENDENCE OF THE GALLIUM VACANCY PRODUCTION IN IRRADIATED N-TYPE GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 42(6), 1995, pp. 2095-2103
Authors:
WU FM
SHI Y
PARENTEAU M
JORIO A
CARLONE C
Citation: Fm. Wu et al., ANALYSIS OF FREE-EXCITON PROPERTIES IN GAAS EPITAXIAL LAYERS WITH THEIMPROVED MODEL OF PHOTOCONDUCTIVITY SPECTRA, Physica status solidi. b, Basic research, 186(1), 1994, pp. 133-141
Authors:
CARLONE C
REJEB C
JORIO A
PARENTEAU M
KHANNA SM
Citation: C. Carlone et al., RADIATION-INDUCED CARBON COMPLEXES IN GALLIUM-ARSENIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 405-408
Authors:
JORIO A
WANG A
PARENTEAU M
CARLONE C
ROWELL NL
KHANNA SM
Citation: A. Jorio et al., OPTICAL-IDENTIFICATION OF THE GALLIUM VACANCY IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 50(3), 1994, pp. 1557-1566
Authors:
JORIO A
PARENTEAU M
AUBIN M
CARLONE C
KHANNA SM
GERDES JW
Citation: A. Jorio et al., A MOBILITY STUDY OF THE RADIATION-INDUCED ORDER EFFECT IN GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 41(6), 1994, pp. 1937-1944
Authors:
JORIO A
REJEB C
PARENTEAU M
CARLONE C
KHANNA SM
Citation: A. Jorio et al., RADIATION-INDUCED CARRIER ENHANCEMENT AND INTRINSIC DEFECT TRANSFORMATION IN N-GAAS, Journal of applied physics, 74(4), 1993, pp. 2310-2317
Authors:
KHANNA SM
REJEB C
JORIO A
PARENTEAU M
CARLONE C
GERDES JW
Citation: Sm. Khanna et al., ELECTRON AND NEUTRON RADIATION-INDUCED ORDER EFFECT IN GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1350-1359
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