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Results:
1-7
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Results: 7
Authors:
JU DH
Citation: Dh. Ju, CHINA BUDDING SOFTWARE INDUSTRY, IEEE software, 15(2), 1998, pp. 20-21
Authors:
YU B
JU DH
LEE WC
KEPLER N
KING TJ
HU CM
Citation: B. Yu et al., GATE ENGINEERING FOR DEEP-SUBMICRON CMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1253-1262
Authors:
YU B
JU DH
KEPLER N
KING TJ
HU CM
Citation: B. Yu et al., IMPACT OF GATE MICROSTRUCTURE ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR PERFORMANCE, JPN J A P 2, 36(9AB), 1997, pp. 1150-1152
Authors:
YU B
JU DH
KEPLER N
HU CM
Citation: B. Yu et al., IMPACT OF NITROGEN (N-14) IMPLANTATION INTO POLYSILICON GATE ON HIGH-PERFORMANCE DUAL-GATE CMOS TRANSISTORS, IEEE electron device letters, 18(7), 1997, pp. 312-314
Authors:
ZHAO YM
JU DH
Citation: Ym. Zhao et Dh. Ju, COMMENTS ON EXPERIMENTAL AND THEORETICAL COMPARISON OF SOME ALGORITHMS FOR BEAMFORMING IN SINGLE RECEIVER ADAPTIVE ARRAYS, IEEE transactions on antennas and propagation, 43(11), 1995, pp. 1348-1349
Authors:
GOO JS
SHIN H
HWANG H
KANG DG
JU DH
Citation: Js. Goo et al., PHYSICAL ANALYSIS FOR SATURATION BEHAVIOR OF HOT-CARRIER DEGRADATION IN LIGHTLY DOPED DRAIN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 1, 33(1B), 1994, pp. 606-611
Authors:
HWANG H
SHIN H
KANG DG
JU DH
Citation: H. Hwang et al., CURRENT-CROWDING EFFECT IN DIAGONAL MOSFETS, IEEE electron device letters, 14(6), 1993, pp. 289-291
Risultati:
1-7
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