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SIMULATION, FABRICATION AND CHARACTERIZATION OF A NOVEL P-I-N-DRAIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION
Authors:
JUNG LT MANNA I BANERJEE SK
Citation:
Lt. Jung et al., SIMULATION, FABRICATION AND CHARACTERIZATION OF A NOVEL P-I-N-DRAIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1591-1599
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