SIMULATION, FABRICATION AND CHARACTERIZATION OF A NOVEL P-I-N-DRAIN MOSFET STRUCTURE FOR HOT-CARRIER SUPPRESSION

A new P-I-N-drain MOSFET structure has been developed with;very low (n ear-intrinsic) doping (10(15)-10(16) Cm-3 in our case) in the channel near the source/drain ends. The new structure is more effective in red ucing the peak electric field at the channel/drain junction than LDD s tructures, and hence results in better hot carrier suppression. Also, simulations show that the near-intrinsic region near the drain reduces the transverse electric field and gives rise to higher carrier mobili ty and drive current. Experimental results show that, with the new str ucture, the substrate current and oxide charging due to hot-carrier in jection are greatly reduced.