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Results: 1-12 |
Results: 12

Authors: Cheng, JY Gibson, JM Jacobson, DC
Citation: Jy. Cheng et al., Observations of structural order in ion-implanted amorphous silicon, J MATER RES, 16(11), 2001, pp. 3030-3033

Authors: Kalyanaraman, R Haynes, TE Yoon, M Larson, BC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter, NUCL INST B, 175, 2001, pp. 182-186

Authors: Benton, JL Boone, T Jacobson, DC Silverman, PJ Rosamilia, JM Rafferty, CS Weinzierl, S Vu, B
Citation: Jl. Benton et al., Electrical properties of cobalt and copper contamination in processed silicon, J ELCHEM SO, 148(6), 2001, pp. G326-G329

Authors: Benton, JL Boone, T Jacobson, DC Rafferty, CS
Citation: Jl. Benton et al., Gettering of Co in Si by high-energy B ion-implantation and by p/p(+) epitaxial Si, APPL PHYS L, 77(24), 2000, pp. 4010-4012

Authors: Ajgaonkar, M Zhang, Y Grebel, H Sosnowski, M Jacobson, DC
Citation: M. Ajgaonkar et al., Linear and nonlinear optical properties of erbium-implanted coherent arrayof submicron silica spheres, APPL PHYS L, 76(26), 2000, pp. 3876-3878

Authors: Kalyanaraman, R Haynes, TE Venezia, VC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling, APPL PHYS L, 76(23), 2000, pp. 3379-3381

Authors: Bourdelle, KK Eaglesham, DJ Jacobson, DC Poate, JM
Citation: Kk. Bourdelle et al., The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon, J APPL PHYS, 86(3), 1999, pp. 1221-1225

Authors: Benton, JL Jacobson, DC Jackson, B Johnson, JA Boone, T Eaglesham, DJ Stevie, FA Becerro, J
Citation: Jl. Benton et al., Behavior of molybdenum in silicon evaluated for integrated circuit processing, J ELCHEM SO, 146(5), 1999, pp. 1929-1933

Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085

Authors: Williams, JS Conway, MJ Wong-Leung, J Deenapanray, PNK Petravic, M Brown, RA Eaglesham, DJ Jacobson, DC
Citation: Js. Williams et al., The role of oxygen on the stability of gettering of metals to cavities in silicon, APPL PHYS L, 75(16), 1999, pp. 2424-2426

Authors: Venezia, VC Haynes, TE Agarwal, A Pelaz, L Gossmann, HJ Jacobson, DC Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301

Authors: Baumvol, IJR Krug, C Stedile, FC Green, ML Jacobson, DC Eaglesham, D Bernstein, JD Shao, J Denholm, AS Kellerman, PL
Citation: Ijr. Baumvol et al., Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation, APPL PHYS L, 74(6), 1999, pp. 806-808
Risultati: 1-12 |