Authors:
Jalabert, L
Temple-Boyer, P
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Voillot, F
Armand, C
Citation: L. Jalabert et al., Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer, MICROEL REL, 41(7), 2001, pp. 981-985
Authors:
Temple-Boyer, P
Jalabert, L
Masarotto, L
Alay, JL
Morante, JR
Citation: P. Temple-boyer et al., Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia, J VAC SCI A, 18(5), 2000, pp. 2389-2393
Authors:
Jalabert, L
Temple-Boyer, P
Olivie, F
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Citation: L. Jalabert et al., Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures, MICROEL REL, 40(4-5), 2000, pp. 597-600