Authors: Blant, AV Cheng, TS Jeffs, NJ Flannery, LB Harrison, I Mosselmans, JFW Smith, AD Foxon, CT

Citation: Av. Blant et al., EXAFS studies of Mg doped InN grown on Al2O3, MAT SCI E B, 59(1-3), 1999, pp. 218-221

Authors: Foxon, CT Cheng, TS Novikov, SV Jeffs, NJ Hughes, OH Melnik, YV Nikolaev, AE Dmitriev, VA

Citation: Ct. Foxon et al., Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy, SURF SCI, 421(3), 1999, pp. 377-385

Authors: Foxon, CT Davis, CS Novikov, SV Hughes, OH Cheng, TS Korakakis, D Jeffs, NJ Grzegory, I Porowski, S

Citation: Ct. Foxon et al., RHEED studies of group III-nitrides grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 723-726

Authors: Foxon, CT Cheng, TS Novikov, SV Korakakis, D Jeffs, NJ Grzegory, I Porowski, S

Citation: Ct. Foxon et al., Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals, J CRYST GR, 207(1-2), 1999, pp. 1-7

Authors: Hughes, OH Cheng, TS Novikov, SV Foxon, CT Korakakis, D Jeffs, NJ

Citation: Oh. Hughes et al., RHEED studies of the GaN surface during growth by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 388-391

Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT

Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18