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Results:
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Results: 2
High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
Authors:
Sheppard, ST Doverspike, K Pribble, WL Allen, ST Palmour, JW Kehias, LT Jenkins, TJ
Citation:
St. Sheppard et al., High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, IEEE ELEC D, 20(4), 1999, pp. 161-163
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology
Authors:
Jenkins, TJ Kehias, L Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Pusl, J Widman, D
Citation:
Tj. Jenkins et al., Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology, IEEE J SOLI, 34(9), 1999, pp. 1239-1245
Risultati:
1-2
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