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Results: 1-13 |
Results: 13
Modification of a shallow 2DEG by AFM lithography
Authors: Nemutudi, R Curson, NJ Appleyard, NJ Ritchie, DA Jones, GAC
Citation: R. Nemutudi et al., Modification of a shallow 2DEG by AFM lithography, MICROEL ENG, 57-8, 2001, pp. 967-973
Ballistic transport in a GaAs/AlxGa1-xAs one-dimensional channel fabricated using an atomic force microscope
Authors: Curson, NJ Nemutudi, R Appleyard, NJ Pepper, M Ritchie, DA Jones, GAC
Citation: Nj. Curson et al., Ballistic transport in a GaAs/AlxGa1-xAs one-dimensional channel fabricated using an atomic force microscope, APPL PHYS L, 78(22), 2001, pp. 3466-3468
Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation
Authors: Kaminsky, WM Jones, GAC Patel, NK Booij, WE Blamire, MG Gardiner, SM Xu, YB Bland, JAC
Citation: Wm. Kaminsky et al., Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation, APPL PHYS L, 78(11), 2001, pp. 1589-1591
Enhanced coherent terahertz emission from indium arsenide
Authors: McLaughlin, R Chen, Q Corchia, A Ciesla, CM Arnone, DD Zhang, XC Jones, GAC Lindfield, EH Pepper, M
Citation: R. Mclaughlin et al., Enhanced coherent terahertz emission from indium arsenide, J MOD OPT, 47(11), 2000, pp. 1847-1856
Electroabsorption in a GaAs n-i-p-i structure with selective contacts fabricated by focused ion molecular beam epitaxy
Authors: Vijendran, S Jones, GAC Beere, HE Shields, AJ
Citation: S. Vijendran et al., Electroabsorption in a GaAs n-i-p-i structure with selective contacts fabricated by focused ion molecular beam epitaxy, MICROEL ENG, 53(1-4), 2000, pp. 631-634
Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field
Authors: McLaughlin, R Corchia, A Johnston, MB Chen, Q Ciesla, CM Arnone, DD Jones, GAC Linfield, EH Davies, AG Pepper, M
Citation: R. Mclaughlin et al., Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field, APPL PHYS L, 76(15), 2000, pp. 2038-2040
Independently contacted electron-hole gas heterostructures fabricated withfocused ion beam doping during molecular beam epitaxial growth
Authors: Vijendran, S Sazio, PJA Beere, HE Jones, GAC Ritchie, DA Norman, CE
Citation: S. Vijendran et al., Independently contacted electron-hole gas heterostructures fabricated withfocused ion beam doping during molecular beam epitaxial growth, J VAC SCI B, 17(6), 1999, pp. 3226-3230
Anomalous integer quantum Hall states in coupled double quantum wells and the effect of Landau level broadening
Authors: Millard, IS Patel, NK Foden, CL Hamilton, AR Simmons, MY Ritchie, DA Jones, GAC Pepper, M
Citation: Is. Millard et al., Anomalous integer quantum Hall states in coupled double quantum wells and the effect of Landau level broadening, J PHYS-COND, 11(18), 1999, pp. 3711-3728
Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type doping
Authors: Sazio, PJA Vijendran, S Yu, W Beere, HE Jones, GAC Linfield, EH Ritchie, DA
Citation: Pja. Sazio et al., Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type doping, J CRYST GR, 202, 1999, pp. 12-16
Very high quality 2DEGS formed without dopant in GaAs AlGaAs heterostructures
Authors: Harrell, RH Thompson, JH Ritchie, DA Simmons, MY Jones, GAC Pepper, M
Citation: Rh. Harrell et al., Very high quality 2DEGS formed without dopant in GaAs AlGaAs heterostructures, J CRYST GR, 202, 1999, pp. 159-162
Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100)
Authors: Brown, SJ Rose, PD Jones, GAC Linfield, EH Ritchie, DA
Citation: Sj. Brown et al., Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100), APPL PHYS L, 74(4), 1999, pp. 576-578
Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures
Authors: Harrell, RH Pyshkin, KS Simmons, MY Ritchie, DA Ford, CJB Jones, GAC Pepper, M
Citation: Rh. Harrell et al., Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures, APPL PHYS L, 74(16), 1999, pp. 2328-2330
In situ Ga+ focused ion beam definition of high current density resonant tunneling diodes
Authors: See, P Linfield, EH Arhone, DD Rose, PD Ritchie, DA Jones, GAC
Citation: P. See et al., In situ Ga+ focused ion beam definition of high current density resonant tunneling diodes, J VAC SCI B, 16(6), 1998, pp. 3305-3310
Risultati: 1-13 |