Authors: Joshkin, VA Moran, P Saulys, D Kuech, TF McCaughan, L Oktyabrsky, SR

Citation: Va. Joshkin et al., Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors, APPL PHYS L, 76(15), 2000, pp. 2125-2127

Authors: Joshkin, VA Parker, CA Bedair, SM Muth, JF Shmagin, IK Kolbas, RM Piner, EL Molnar, RJ

Citation: Va. Joshkin et al., Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 281-288