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Citation: V. Palankovski et al., IMPLICATIONS OF DOPANT-DEPENDENT LOW-FIELD MOBILITY AND BAND-GAP NARROWING ON THE BIPOLAR DEVICE PERFORMANCE, Journal de physique. IV, 8(P3), 1998, pp. 91-94

Authors: KAIBLINGERGRUJIN G KOSINA H

Citation: G. Kaiblingergrujin et H. Kosina, AN IMPROVED IONIZED IMPURITY SCATTERING MODEL FOR MONTE-CARLO CALCULATIONS, VLSI design (Print), 6(1-4), 1998, pp. 209-212

Authors: KOSINA H KAIBLINGERGRUJIN G

Citation: H. Kosina et G. Kaiblingergrujin, IONIZED-IMPURITY SCATTERING OF MAJORITY ELECTRONS IN SILICON, Solid-state electronics, 42(3), 1998, pp. 331-338

Authors: KAIBLINGERGRUJIN G KOSINA H SELBERHERR S

Citation: G. Kaiblingergrujin et al., INFLUENCE OF THE DOPING ELEMENT ON THE ELECTRON-MOBILITY IN N-SILICON, Journal of applied physics, 83(6), 1998, pp. 3096-3101