IONIZED-IMPURITY SCATTERING OF MAJORITY ELECTRONS IN SILICON

The Brooks-Herring approach to ionized-impurity scattering overestimat es the low-held mobility of electrons in doped semiconductors. It reli es on a static single-site description of the carrier-impurity interac tion and on the first Born approximation. We present a consistent ioni zed-impurity scattering model which accounts for degenerate statistics , dispersive screening and two-ion scattering. The dielectric function is accurately approximated by a rational function. From the Schwinger scattering amplitude a correction to the first Born amplitude is deri ved. Plasmon scattering as another concentration dependent mechanism i s included. Despite the various physical effects taken into considerat ion the scattering model can be used in Monte Carlo transport calculat ions without any significant increase in computation time. Monte Carlo calculations of majority electron mobility in silicon are discussed, and good agreement with experimental data is found in the doping range [10(14), 10(20)] cm(-3). (C) 1998 Published by Elsevier Science Ltd. All rights reserved.