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Results: 1-10 |
Results: 10
NATURE OF STRANSKI-KRASTANOW GROWTH OF INAS ON GAAS(001)
Authors: RAMACHANDRAN TR MADHUKAR A MUKHAMETZHANOV I HEITZ R KALBURGE A XIE Q CHEN P
Citation: Tr. Ramachandran et al., NATURE OF STRANSKI-KRASTANOW GROWTH OF INAS ON GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1330-1333
EXCITED-STATES AND ENERGY RELAXATION IN STACKED INAS GAAS QUANTUM DOTS/
Authors: HEITZ R KALBURGE A XIE Q GRUNDMANN M CHEN P HOFFMANN A MADHUKAR A BIMBERG D
Citation: R. Heitz et al., EXCITED-STATES AND ENERGY RELAXATION IN STACKED INAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 57(15), 1998, pp. 9050-9060
CARRIER CAPTURE AND RELAXATION PROCESSES IN INAS GAAS QUANTUM DOTS/
Authors: HEITZ R VEIT M GRUNDMANN M LEDENTSOV NN HOFFMANN A BIMBERG D KALBURGE A XIE Q CHEN P MADHUKAR A USTINOV VM KOPEV PS ALFEROV ZI
Citation: R. Heitz et al., CARRIER CAPTURE AND RELAXATION PROCESSES IN INAS GAAS QUANTUM DOTS/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 163-171
OBSERVATION OF REENTRANT 2D TO 3D MORPHOLOGY TRANSITION IN HIGHLY STRAINED EPITAXY - INAS ON GAAS
Authors: HEITZ R RAMACHANDRAN TR KALBURGE A XIE Q MUKHAMETZHANOV I CHEN P MADHUKAR A
Citation: R. Heitz et al., OBSERVATION OF REENTRANT 2D TO 3D MORPHOLOGY TRANSITION IN HIGHLY STRAINED EPITAXY - INAS ON GAAS, Physical review letters, 78(21), 1997, pp. 4071-4074
REENTRANT BEHAVIOR OF 2D TO 3D MORPHOLOGY CHANGE AND 3D ISLAND LATERAL SIZE EQUALIZATION VIA MASS-EXCHANGE IN STRANSKI-KRASTANOW GROWTH - INAS ON GAAS(001)
Authors: RAMACHANDRAN TR HEITZ R KOBAYASHI NP KALBURGE A YU W CHEN P MADHUKAR A
Citation: Tr. Ramachandran et al., REENTRANT BEHAVIOR OF 2D TO 3D MORPHOLOGY CHANGE AND 3D ISLAND LATERAL SIZE EQUALIZATION VIA MASS-EXCHANGE IN STRANSKI-KRASTANOW GROWTH - INAS ON GAAS(001), Journal of crystal growth, 175, 1997, pp. 216-223
FOCUSED ION-BEAM-ASSISTED CHEMICALLY ETCHED MESAS ON GAAS(001) AND THE NATURE OF SUBSEQUENT MOLECULAR-BEAM EPITAXIAL-GROWTH
Authors: KALBURGE A KONKAR A RAMACHANDRAN TR CHEN P MADHUKAR A
Citation: A. Kalburge et al., FOCUSED ION-BEAM-ASSISTED CHEMICALLY ETCHED MESAS ON GAAS(001) AND THE NATURE OF SUBSEQUENT MOLECULAR-BEAM EPITAXIAL-GROWTH, Journal of applied physics, 82(2), 1997, pp. 859-864
STRAINED COHERENT INAS QUANTUM BOX ISLANDS ON GAAS(100) - SIZE EQUALIZATION, VERTICAL SELF-ORGANIZATION, AND OPTICAL-PROPERTIES
Authors: XIE QH KOBAYASHI NP RAMACHANDRAN TR KALBURGE A CHEN P MADHUKAR A
Citation: Qh. Xie et al., STRAINED COHERENT INAS QUANTUM BOX ISLANDS ON GAAS(100) - SIZE EQUALIZATION, VERTICAL SELF-ORGANIZATION, AND OPTICAL-PROPERTIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2203-2207
OBSERVATION OF LASING FROM VERTICALLY SELF-ORGANIZED INAS 3-DIMENSIONAL ISLAND QUANTUM BOXES ON GAAS(001)
Authors: XIE Q KALBURGE A CHEN P MADHUKAR A
Citation: Q. Xie et al., OBSERVATION OF LASING FROM VERTICALLY SELF-ORGANIZED INAS 3-DIMENSIONAL ISLAND QUANTUM BOXES ON GAAS(001), IEEE photonics technology letters, 8(8), 1996, pp. 965-967
STRUCTURAL AND OPTICAL BEHAVIOR OF STRAINED INAS QUANTUM BOXES GROWN ON PLANAR AND PATTERNED GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: XIE QH KONKAR A KALBURGE A RAMACHANDRAN TR CHEN P CARTLAND R MADHUKAR A LIN HT RICH DH
Citation: Qh. Xie et al., STRUCTURAL AND OPTICAL BEHAVIOR OF STRAINED INAS QUANTUM BOXES GROWN ON PLANAR AND PATTERNED GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 642-645
REALIZATION OF OPTICALLY-ACTIVE STRAINED INAS ISLAND QUANTUM BOXES ONGAAS(100) VIA MOLECULAR-BEAM EPITAXY AND THE ROLE OF ISLAND INDUCED STRAIN FIELDS
Authors: XIE QH CHEN P KALBURGE A RAMACHANDRAN TR NAYFONOV A KONKAR A MADHUKAR A
Citation: Qh. Xie et al., REALIZATION OF OPTICALLY-ACTIVE STRAINED INAS ISLAND QUANTUM BOXES ONGAAS(100) VIA MOLECULAR-BEAM EPITAXY AND THE ROLE OF ISLAND INDUCED STRAIN FIELDS, Journal of crystal growth, 150(1-4), 1995, pp. 357-363
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