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Results:
1-16
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Results: 16
Authors:
KAMINS TI
MEDEIROSRIBEIRO G
OHLBERG DAA
WILLIAMS RS
Citation: Ti. Kamins et al., DOME-TO-PYRAMID TRANSITION INDUCED BY ALLOYING OF GE ISLANDS ON SI(001), Applied physics A: Materials science & processing, 67(6), 1998, pp. 727-730
Authors:
MEDEIROSRIBEIRO G
KAMINS TI
OHLBERG DAA
WILLIAMS RS
Citation: G. Medeirosribeiro et al., ANNEALING OF GE NANOCRYSTALS ON SI(001) AT 550-DEGREES-C - METASTABILITY OF HUTS AND THE STABILITY OF PYRAMIDS AND DOMES, Physical review. B, Condensed matter, 58(7), 1998, pp. 3533-3536
Authors:
KAMINS TI
WILLIAMS RS
Citation: Ti. Kamins et Rs. Williams, A MODEL FOR SIZE EVOLUTION OF PYRAMIDAL GE ISLANDS ON SI(001) DURING ANNEALING, Surface science, 405(2-3), 1998, pp. 580-586
Authors:
MEDEIROSRIBEIRO G
BRATKOVSKI AM
KAMINS TI
OHLBERG DAA
WILLIAMS RS
Citation: G. Medeirosribeiro et al., SHAPE TRANSITION OF GERMANIUM NANOCRYSTALS ON A SILICON(001) SURFACE FROM PYRAMIDS TO DOMES, Science, 279(5349), 1998, pp. 353-355
Authors:
KOLOSOV OV
CASTELL MR
MARSH CD
BRIGGS GAD
KAMINS TI
WILLIAMS RS
Citation: Ov. Kolosov et al., IMAGING THE ELASTIC NANOSTRUCTURE OF GE ISLANDS BY ULTRASONIC FORCE MICROSCOPY, Physical review letters, 81(5), 1998, pp. 1046-1049
Authors:
KAMINS TI
BRIGGS GAD
WILLIAMS RS
Citation: Ti. Kamins et al., INFLUENCE OF HCL ON THE CHEMICAL-VAPOR-DEPOSITION AND ETCHING OF GE ISLANDS ON SI(001), Applied physics letters, 73(13), 1998, pp. 1862-1864
Authors:
KAMINS TI
CARR EC
WILLIAMS RS
ROSNER SJ
Citation: Ti. Kamins et al., DEPOSITION OF 3-DIMENSIONAL GE ISLANDS ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC AND REDUCED PRESSURES, Journal of applied physics, 81(1), 1997, pp. 211-219
Authors:
KAMINS TI
LEFFORGE D
Citation: Ti. Kamins et D. Lefforge, CONTROL OF N-TYPE DOPANT TRANSITIONS IN LOW-TEMPERATURE SILICON EPITAXY, Journal of the Electrochemical Society, 144(2), 1997, pp. 674-678
Authors:
KAMINS TI
WILLIAMS RS
Citation: Ti. Kamins et Rs. Williams, LITHOGRAPHIC POSITIONING OF SELF-ASSEMBLED GE ISLANDS ON SI(001), Applied physics letters, 71(9), 1997, pp. 1201-1203
Authors:
KAMINS TI
FISCHERCOLBRIE A
Citation: Ti. Kamins et A. Fischercolbrie, EFFECT OF TOTAL DEPOSITION PRESSURE ON THE STRUCTURE OF POLYCRYSTALLINE-SILICON FILMS, Applied physics letters, 71(16), 1997, pp. 2322-2324
Authors:
CARNS TK
CHUN SK
TANNER MO
WANG KL
KAMINS TI
TURNER JE
LIE DYC
NICOLET MA
WILSON RG
Citation: Tk. Carns et al., HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1273-1281
Authors:
VOOK D
KAMINS TI
BURTON G
VANDEVOORDE PJ
WANG HH
COEN R
LIN J
PETTENGILL DF
YU PK
ROSNER SJ
TURNER JE
LADERMAN SS
FU HS
WANG AS
Citation: D. Vook et al., DOUBLE-DIFFUSED GRADED SIGE-BASE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 1013-1018
Authors:
TSUTSU H
EDWARDS WJ
AST DG
KAMINS TI
Citation: H. Tsutsu et al., OXIDATION OF POLYCRYSTALLINE-SIGE ALLOYS, Applied physics letters, 64(3), 1994, pp. 297-299
Authors:
KAMINS TI
Citation: Ti. Kamins, PATTERN SENSITIVITY OF SELECTIVE SI1-XGEX CHEMICAL-VAPOR-DEPOSITION -PRESSURE-DEPENDENCE, Journal of applied physics, 74(9), 1993, pp. 5799-5802
Authors:
NASSERBAKHT GN
ADKISSON JW
WOOLEY BA
HARRIS JS
KAMINS TI
Citation: Gn. Nasserbakht et al., A MONOLITHIC GAAS-ON-SI RECEIVER FRONT-END FOR OPTICAL INTERCONNECT SYSTEMS, IEEE journal of solid-state circuits, 28(6), 1993, pp. 622-630
Authors:
KAMINS TI
NAUKA K
JACOWITZ RD
HOYT JL
NOBLE DB
GIBBONS JF
Citation: Ti. Kamins et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF DIODES FABRICATED IN THICK, SELECTIVELY DEPOSITED SI SI1-XGEX EPITAXIAL LAYERS/, IEEE electron device letters, 13(4), 1992, pp. 177-179
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