HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS

Both Hall and drift in-plane mobilities have been measured in compress ively strained p-type Si1-xGex layers grown by both chemical vapor dep osition (CVD) and molecular beam epitaxy (MBE). Measurements were take n over the boron doping range of 10(18) cm-3 to 10(20) cm-3 with Ge co ntents of 0 less-than-or-equal-to x less-than-or-equal-to 0.22. The ap parent drift mobility is found to increase with increasing Ge content, whereas the Hall mobility decreases for the same samples at all dopin g levels studied. The Hall factor decreases with increasing Ge content , which may be due to additional scattering mechanisms introduced by G e along with changes in the valence band structure as a result of stra in. In this study we also provide the first report of Hall mobility me asurements of deuterium-passivated, heavily doped Si.